Abstract: An optical filter array includes a substrate permeable to an electromagnetic radiation to be detected, a first DBR mirror arranged on the substrate, a second DBR minor arranged above the first DBR mirror, and a plurality of cavity sections. The cavity sections have different respective optical lengths, and are arranged so as to be spatially separated from each other between the first DBR mirror and the second DBR mirror. Each of the first DBR mirror, the second DBR mirror, and the plurality of cavity sections with different optical lengths form filter elements of a filter. The filter reflects in a stopband determined by the first DBR mirror and the second DBR mirror. Each filter element has at least one narrow transmission band determined by the optical length of its respective cavity section located inside the stopband. A different thicknesses of the cavity sections is provided via a nanoimprint process.

Abstract: An optical filter array includes a substrate permeable to an electromagnetic radiation to be detected, a first DBR mirror arranged on the substrate, a second DBR minor arranged above the first DBR mirror, and a plurality of cavity sections. The cavity sections have different respective optical lengths, and are arranged so as to be spatially separated from each other between the first DBR minor and the second DBR mirror. Each of the first DBR minor, the second DBR mirror, and the plurality of cavity sections with different optical lengths form filter elements of a filter. The filter reflects in a stopband determined by the first DBR mirror and the second DBR mirror. Each filter element has at least one narrow transmission band determined by the optical length of its respective cavity section located inside the stopband. A different thicknesses of the cavity sections is provided via a nanoimprint process.

Abstract: The invention relates to an optical filter and a method for its production, and to a device for the examination of the spectral and spatial distribution of an electromagnetic radiation irradiated from an object. The invention is based on the task of providing an optical filter of the above described type that is inexpensive to produce, which can be used to detect a plurality of wavelengths, in which, however, tuning of the DBR mirrors by means of displacement is not necessary. Furthermore, a method for the production of such a filter is provided.

Abstract: A sensor device for determining a physical value using a laser, whose emission behavior can be affected by the physical value is described. The laser is arranged to emit at least two concurrent modes lying above a laser threshold and the physical value is determined using a comparison of changes of the at least two modes occurring under the influence of the physical value.

Abstract: The invention relates to an optical filter and a method for its production, and to a device for the examination of the spectral and spatial distribution of an electromagnetic radiation irradiated from an object. The invention is based on the task of providing an optical filter of the above described type that is inexpensive to produce, which can be used to detect a plurality of wavelengths, in which, however, tuning of the DBR mirrors by means of displacement is not necessary. Furthermore, a method for the production of such a filter is provided.

Abstract: The invention relates to a microstructured technological system and, in particular, micromirror arrangements. The aim of the invention is to produce facade elements for buildings having large areas in square centimetres and above, at reduced cost. The entire micromirror arrangement can be produced as a flat, architectonically useable structural element in a modularly replicable manner. According to the invention, the control electronic system, which contains the logics which are controlled as mirror elements, is arranged in the centre of a control device at a specific, remote distance from which an addressing network is used to control the individual mirror elements or modules. Said addressing network is already integrated into the flat modules during production and to a large degree, in the form of printed lines. As a result, the necessity of incorporating silicon-based chip technology into the facade elements, which is expensive, is no longer necessary.

Abstract: A sensor process and device are described for determining a physical value by means of a laser whose emission properties can be influenced by the physical value. The laser is designed to radiate at least two concurrent modes (E1, E2, E1?, E2?) above the laser threshold. The physical value is determined by comparing the influence of changes in the at least two modes resulting from the influence of the physical value (such as ?I). The physical value can be, for example, a substance concentration, length, temperature, pressure or electric current.

Abstract: The invention relates to a microstructured technological system and, in particular, micromirror arrangements. The aim of the invention is to produce facade elements for buildings having large areas in square centimetres and above, at reduced cost. The entire micromirror arrangement can be produced as a flat, architectonically useable structural element in a modularly replicable manner. According to the invention, the control electronic system, which contains the logics which are controlled as mirror elements, is arranged in the centre of a control device at a specific, remote distance from which an addressing network is used to control the individual mirror elements or modules. Said addressing network is already integrated into the flat modules during production and to a large degree, in the form of printed lines. As a result, the necessity of incorporating silicon-based chip technology into the facade elements, which is expensive, is no longer necessary.

Abstract: A method and device for tuning the wavelength of an optoelectronic component arrangement including at least two optoelectronic components. The characteristic wavelength for each optoelectronic component is adjusted using a respective resistance device which is connected between a common voltage/power source and a respective heating device associated with each optoelectronic component. Heating capacity is modified by changing the overall resistance of the respective resistance device (RM) in order to adjust wavelength. The wavelength of semiconductor lasers, filters, wavelength multiplexers and waveguides may be tuned.

Abstract: A scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).

Abstract: A method for manufacturing and calibrating a scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures, and such a scale. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction.

Abstract: A method of wavelength tuning an opto-electronic component arrangement with at least two opto-electronic components is disclosed. The method includes the step of setting a characteristic wavelength for each opto-electronic component by selectively modifying a resistance of a conductor of a resistance heater and/or by selectively modifying a resistance of a resistor arrangement connected upstream from the resistance heater. The method, which minimizes costs, is aimed at wavelength tuning of semiconductor lasers, optical amplifiers, filters, wavelength multiplexers and optical fibers.

Abstract: The present invention provides an optoelectronic apparatus operating on different wavelength channels, such that the individual wavelength channels are individually variable in wavelength. The optoelectronic apparatus may be based on multisectioning of at least one bent waveguides is realized in one embodiment of the present invention by at least one isolation trench over the bent waveguide, the trench having a resistance of at least 10 ohms between a first and second individual section, wherein the first and the second sections can be supplied with an individual control current. The arrangement and depth of the at least one isolation trench corresponds with the bend of the at least one bent waveguides, wherein a bending function yi(x) of the at least one bent waveguide is determined according to model calculation-assisted optimizations.

Abstract: Disclosed is a method for the optimum utilization of disk-shaped base material in the manufacture of optoelectronic components with variable-period grating. The method helps avoid material losses by arranging optoelectronic components on a disk-shaped base material in an optimum manner and is based on obtaining variants of nominally identical individual component patterns by mathematical rotation and mirroring, forming a unit cell through shifting of the individual component pattern variants, and reproducing the unit cell in the x and y directions until the active surface of the mask or the entire surface of the disk-shaped base material is tightly covered. The method may be used for the manufacture of photonic components based on DFB, DBR, or sampled grating structures.

Abstract: The process for production of an optoelectronic component having a predetermined coupling coefficient distribution and a predetermined phase shift distribution includes providing a photomask defining lateral and axial geometry of the grating fields of the optoelectronic compound, particularly predetermined curved grating boundaries between regions of the optoelectronic component having the grating fields and grating-free regions; performing a spin-on deposition of a photoresist on the semiconductor layers of a semiconductor substrate; structuring the semiconductor layers so that a DFB or DBR grating structure is located between the spin-on photoresist and the semiconductor substrate; after performing the spin-on deposition of the photoresist, exposing the photoresist using the provided photomask to form the optoelectronic component in the semiconductor substrate; and after the exposing of the photoresist using the photomask, etching surfaces of the optoelectronic component which are to be free of the grating

Abstract: An optoelectronic multi-wavelength component is described for n waveguides with optical feedback gratings arranged side by side laterally to have different characteristic wavelengths. The multi-wavelength component is based on at least two optical waveguides arranged on a substrate so they intersect the grating lines of one or more grating fields at different angles. The grating lines of the feedback grating run at a tilted angle relative to a preferential direction. The angles between each individual waveguide and the grating lines of the respective grating are in the range between 40.degree. and 140.degree.. A controlled change in the effective corrugation period from one waveguide to the next is achieved by means of the individual dimensioning of the tilt angle between the waveguide and the grating lines of the respective feedback grating. The solution is used in photonic components that work on different waveguide channels and are based on DFB or DBR gratings or sampled gratings.