Abstract: Amorphous silicon carbon composite particles contain, as components of the particles, 85 to 99.63 wt.-% silicon content, 0.3 to 15 wt.-% carbon content, and at least 0.07 wt.-% hydrogen content, where the components sum up to 100 wt.-%. The carbon content in the area beneath the surface of the particles, starting from the surface and reaching up to at least 30 nm from the surface in a direction to the centre of the particles, is at least 3 wt.-% higher than in the area of the centre of the particles. The area of the centre is the remaining part of the particles and is directly joined to the area beneath the surface.

Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.

Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.

Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonized to carbon, optionally followed by a third process step of activation.

Abstract: The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticles and/or tin nanoparticles and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticles is carbonized to form carbon.

Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.

Abstract: The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.

Abstract: The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticies and/or tin nanoparticies and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticies is carbonized to form carbon.

Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.

Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.

Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.

Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.

Abstract: Nanoscale silicon particles, essentially hydrogen terminated nanoscale silicon particles, essentially alkyl terminated nanoscale silicon particles, partially alkyl terminated nanoscale silicon particles, methods for producing the particles, and methods for forming electrical components, electronic circuits, and electrochemically active fillers with the particles.

Abstract: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.

Abstract: The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.

Abstract: Aggregated, crystalline silicon powder with a BET surface of more than 50 m2/g. The powder is produced by continuously feeding at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping substance and an inert gas into a reactor and mixing the components there, wherein the proportion of silane is between 0.1 and 90 wt. % referred to the sum total of silane, doping substance and inert gas, the mixture is caused to react by input of energy, wherein a plasma is produced by the input of energy by means of electromagnetic radiation in the microwave range at a pressure of 10 to 1100 mbar, the reaction mixture is allowed to cool and the reaction product is separated in the form of a powder from gaseous substances. The powder may be used for the production of electronic components.