Patents by Inventor Hartmut Wiggers

Hartmut Wiggers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10693129
    Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: June 23, 2020
    Assignee: EVONIK OPERATIONS GMBH
    Inventors: Juergen Erwin Lang, Hartmut Wiggers, Christof Schulz, Hans Orthner, Jasmina Kovacevic
  • Publication number: 20180366722
    Abstract: A process for producing a silicon-SiC composite powder is provided. A gas stream I containing SiH4, Si2H6 and/or Si3H8 and at least one hydrocarbon of ethene and acetylene and a coaxial gas stream II containing hydrogen are fed into a hot wall reactor. The gas stream II forms the jacket stream with respect to the gas stream I. At least the gas stream I is reacted at a temperature of 900° C. to 1100° C. and subsequently at the outlet of the hot wall reactor the reaction mixture is cooled or allowed to cool and the pulverulent reaction product is separated from the gaseous materials.
    Type: Application
    Filed: June 13, 2018
    Publication date: December 20, 2018
    Applicant: Evonik Degussa GmbH
    Inventors: Juergen Erwin LANG, Hartmut Wiggers, Christof Schulz, Hans Orthner, Jasmina Kovacevic
  • Patent number: 9463435
    Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: October 11, 2016
    Assignee: Blücher GmbH
    Inventors: Christof Schulz, Hartmut Wiggers
  • Patent number: 9421518
    Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonized to carbon, optionally followed by a third process step of activation.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: August 23, 2016
    Assignee: BLUCHER GMBH
    Inventors: Christof Schulz, Hartmut Wiggers
  • Patent number: 8945431
    Abstract: The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticles and/or tin nanoparticles and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticles is carbonized to form carbon.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: February 3, 2015
    Assignee: Universität Duisburg-Essen
    Inventors: Christof Schulz, Hartmut Wiggers
  • Publication number: 20150031528
    Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.
    Type: Application
    Filed: September 29, 2014
    Publication date: January 29, 2015
    Inventors: Christof Schulz, Hartmut Wiggers
  • Patent number: 8673502
    Abstract: The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.
    Type: Grant
    Filed: January 25, 2006
    Date of Patent: March 18, 2014
    Assignee: EVONIK DEGUSSA GmbH
    Inventors: Frank-Martin Petrat, Hartmut Wiggers, Burkhard Reeken, Michael Holzapfel, Hilmi Buqa, Petr Novak
  • Publication number: 20110311873
    Abstract: The invention relates to a process for producing an electrically conductive, porous, silicon- and/or tin-containing carbon material which is suitable in particular for the production of an anode material, preferably for lithium ion batteries; in a first step of the process, preferably crystalline silicon nanoparticies and/or tin nanoparticies and/or silicon/tin nanoparticles are introduced into a matrix based on at least one organic polymer, being more particular dispersed therein, and subsequently, in a second step of the process, the resultant polymer matrix containing the silicon, tin and/or silicon/tin nanoparticies is carbonized to form carbon.
    Type: Application
    Filed: July 14, 2009
    Publication date: December 22, 2011
    Inventors: Christof Schulz, Hartmut Wiggers
  • Patent number: 8043593
    Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: October 25, 2011
    Assignee: Evonik Degussa GmbH
    Inventors: Markus Pridoehl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Kraemer
  • Patent number: 8043909
    Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: October 25, 2011
    Assignee: Evonik Degussa GmbH
    Inventors: André Ebbers, Martin Trocha, Robert Lechner, Martin S. Brandt, Martin Stutzmann, Hartmut Wiggers
  • Publication number: 20110190118
    Abstract: The present invention relates to a process for producing a carbon substrate loaded with metal oxides, in particular a carbon material which contains metal oxide nanoparticles and is preferably suitable for use in a catalyst and/or as a catalyst, wherein, in a first process step, nanoparticles of metal oxides are introduced into a matrix based on at least one organic polymer, in particular are dispersed therein, and, in a second process step, the polymer matrix containing the nanoparticles is subsequently carbonised to carbon, optionally followed by a third process step of activation.
    Type: Application
    Filed: July 16, 2009
    Publication date: August 4, 2011
    Inventors: Christof Schulz, Hartmut Wiggers
  • Patent number: 7927570
    Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: April 19, 2011
    Assignee: Evonik Degussa GmbH
    Inventors: Markus Pridoehl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Kraemer
  • Publication number: 20100264377
    Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated crystalline silicon may be doped with a doping component and can be used to produce electronic components.
    Type: Application
    Filed: July 2, 2010
    Publication date: October 21, 2010
    Applicant: EVONIK DEGUSSA GMBH
    Inventors: Markus Pridöhl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Krämer
  • Publication number: 20100221544
    Abstract: Nanoscale silicon particles, essentially hydrogen terminated nanoscale silicon particles, essentially alkyl terminated nanoscale silicon particles, partially alkyl terminated nanoscale silicon particles, methods for producing the particles, and methods for forming electrical components, electronic circuits, and electrochemically active fillers with the particles.
    Type: Application
    Filed: August 17, 2006
    Publication date: September 2, 2010
    Applicant: Degussa AG
    Inventors: Andrea Baumer, Martin S. Brandt, Martin Stutzmann, Hartmut Wiggers
  • Patent number: 7776304
    Abstract: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.
    Type: Grant
    Filed: November 13, 2004
    Date of Patent: August 17, 2010
    Assignee: Evonik Degussa GmbH
    Inventors: Markus Pridoehl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Kraemer
  • Publication number: 20100193746
    Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.
    Type: Application
    Filed: April 13, 2010
    Publication date: August 5, 2010
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Markus PRIDOEHL, Paul ROTH, Hartmut WIGGERS, Frank-Martin PETRAT, Michael KRAEMER
  • Publication number: 20090026458
    Abstract: The present invention provides a porous semiconductive structure, characterized in that the structure has an electrical conductivity of 5·10?8 S·cm?1 to 10 S·cm?1, and an activation energy of the electrical conductivity of 0.1 to 700 meV, and a solid fraction of 30 to 60% by volume, and a pore size of 1 nm to 500 nm, the solid fraction having at least partly crystalline doped constituents which are bonded to one another via sinter necks and have sizes of 5 nm to 500 nm and a spherical and/or ellipsoidal shape, which comprise the elements silicon, germanium or an alloy of these elements, and also a process for producing a porous semiconductive structure, characterized in that A. doped semimetal particles are obtained, and then B. a dispersion is obtained from the semimetal particles obtained after step A, and then C. a substrate is coated with the dispersion obtained after step B, and then D. the layer obtained after step C is treated by means of a solution of hydrogen fluoride in water, and then E.
    Type: Application
    Filed: March 21, 2008
    Publication date: January 29, 2009
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Andre EBBERS, Martin TROCHA, Robert LECHNER, Martin S. BRANDT, Martin STUTZMANN, Hartmut WIGGERS
  • Publication number: 20080145761
    Abstract: The invention relates to a process for producing coated carbon particles, which comprises coating electrically conductive carbon particles with elemental doped or undoped silicon by chemical vapor deposition from at least one gaseous silane in an oxygen-free gas atmosphere in a reaction space, with the electrically conductive carbon particles being in continual motion during the vapor deposition, and also correspondingly coated carbon particles and their use in anode materials for lithium ion batteries.
    Type: Application
    Filed: January 25, 2006
    Publication date: June 19, 2008
    Applicant: DEGUSSA GmbH
    Inventors: Frank-Martin Petrat, Hartmut Wiggers, Burkhard Reeken, Michael Holzapfel, Hilmi Buqa, Petr Novak
  • Publication number: 20070172406
    Abstract: Aggregated, crystalline silicon powder with a BET surface of more than 50 m2/g. The powder is produced by continuously feeding at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping substance and an inert gas into a reactor and mixing the components there, wherein the proportion of silane is between 0.1 and 90 wt. % referred to the sum total of silane, doping substance and inert gas, the mixture is caused to react by input of energy, wherein a plasma is produced by the input of energy by means of electromagnetic radiation in the microwave range at a pressure of 10 to 1100 mbar, the reaction mixture is allowed to cool and the reaction product is separated in the form of a powder from gaseous substances. The powder may be used for the production of electronic components.
    Type: Application
    Filed: November 13, 2004
    Publication date: July 26, 2007
    Applicant: Degussa AG
    Inventors: Markus Pridoehl, Paul Roth, Hartmut Wiggers, Peter Kress, Guido Zimmermann, Stefan Heberer, Frank-Martin Petrat
  • Publication number: 20070094757
    Abstract: Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt.%, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.
    Type: Application
    Filed: November 13, 2004
    Publication date: April 26, 2007
    Applicant: Degussa AG
    Inventors: Markus Pridohl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Kramer