Patents by Inventor Haru Okawa

Haru Okawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7394141
    Abstract: A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 ?cm or less.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: July 1, 2008
    Assignee: Fujifilm Corporation
    Inventors: Fumitoshi Toyokawa, Haru Okawa, Eiichi Okamoto
  • Publication number: 20070023852
    Abstract: A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: laminating a first epitaxial layer on a semiconductor substrate; forming a part of the photoelectric conversion layer in the first epitaxial layer; forming a second epitaxial layer by epitaxial growth on the first epitaxial layer; and forming the remaining part of the photoelectric conversion layer in the second epitaxial layer to connect the remaining part of the photoelectric conversion layer to the part of the photoelectric conversion layer in the first epitaxial layer.
    Type: Application
    Filed: July 26, 2006
    Publication date: February 1, 2007
    Inventors: Haru Okawa, Shinji Uya, Yuko Nomura
  • Publication number: 20060151813
    Abstract: A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 ?cm or less.
    Type: Application
    Filed: December 20, 2005
    Publication date: July 13, 2006
    Inventors: Fumitoshi Toyokawa, Haru Okawa, Eiichi Okamoto