Abstract: A pillar delivery method is a method for delivering a plurality of pillars onto a substrate, including a glass panel, to manufacture a glass panel unit. The pillar delivery method includes an irradiation step, a holding step, and a mounting step. The irradiation step includes setting, over a holder, a sheet for use to form pillars and irradiating the sheet with a laser beam to punch out the plurality of pillars. The holding step includes having the plurality of pillars, which have been punched out of the sheet, held by the holder. The mounting step includes picking up some or all of the plurality of pillars from the holder and mounting the pillars onto the substrate.

Abstract: A method for manufacturing a glass panel unit includes an assembling step, a bonding step, a gas exhausting step, a sealing step, and an activating step. The bonding step includes melting a peripheral wall in a baking furnace at a first predetermined temperature to hermetically bond a first glass pane and a second glass pane together with the peripheral wall thus melted. The gas exhausting step includes exhausting a gas from an internal space through an exhaust port in the baking furnace to turn the internal space into a vacuum space. The sealing step includes locally heating to a temperature higher than a second predetermined temperature, and thereby melting, either a port sealing material or an exhaust pipe to seal the exhaust port and thereby obtain a work in progress. The activating step includes activating a gas adsorbent after the sealing step to obtain a glass panel unit.

Abstract: The present invention provides a glow plug capable of preventing a deformation or eccentricity of the coil, thereby improving a durability of the coil and preventing a variation in temperature-rising characteristic. Also, the present invention provides a method for manufacturing the glow plug.

Abstract: The present invention provides a glow plug capable of preventing a deformation or eccentricity of the coil, thereby improving a durability of the coil and preventing a variation in temperature-rising characteristic. Also, the present invention provides a method for manufacturing the glow plug.

Abstract: In a delay failure test circuit, a delay failure test between two clock domains among a plurality of clock domains having different operation clock rates is performed. The delay failure test circuit inputs, to a first clock domain, a clock signal having only a launch edge for transferring data from the first clock domain to a second clock domain, and to input, to the second clock domain, a clock signal having only a capture edge for capturing the data.

Abstract: In a delay failure test circuit, a delay failure test between two clock domains among a plurality of clock domains having different operation clock rates is performed. The delay failure test circuit inputs, to a first clock domain, a clock signal having only a launch edge for transferring data from the first clock domain to a second clock domain, and to input, to the second clock domain, a clock signal having only a capture edge for capturing the data.

Abstract: A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

Abstract: A plasma treating apparatus includes: an air-core coil for generating a static magnetic field which is axially uniform and a high-frequency waveguide for generating a high-frequency electromagnetic field which is irregular in the axial direction of the air-core coil. A plasma generating glass tube is disposed in the high-frequency waveguide and adapted to be supplied with a gas and a plasma reaction bath held under a vacuum for receiving the plasma flow which is generated axially in the glass tube. A substrate platform is disposed in the reaction bath for supporting a substrate to be treated at a right angle with respect to the plasma flow. There is also included a magnetic field generating coil disposed outside of said reaction bath for shaping the plasma.

Abstract: Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

Abstract: A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etchant, is formed.

Abstract: A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and subsequently the thin metallic film is heat treated to remove the oxide by sublimation, whereby electrodes or wiring for a semiconductor integrated circuit are formed by the remaining thin metallic film.

Abstract: A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.