Patents by Inventor Haruhiko Fujimoto
Haruhiko Fujimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7602099Abstract: First base layers made of TiN or TiOxNy (where, 0<x<0.2, x+y=1) and second base layers made of Cr are provided between interdigital transducer portions and a piezoelectric substrate, and accordingly, it is possible to prevent voids from being generated in the interdigital transducer portions, which improves a power resistance of the surface acoustic wave device. In addition, since it is possible to prevent the voids from being generated in the interdigital transducer portions, it is possible to suppress the resistance of the interdigital transducer portions from increasing, which can reduce the loss of power. In addition, it is also possible to reduce the variations in a serial resonance frequency and a parallel resonance frequency.Type: GrantFiled: April 21, 2006Date of Patent: October 13, 2009Assignee: Alps Electric Co., Ltd.Inventors: Haruhiko Fujimoto, Kyosuke Ozaki, Satoshi Waga, Toshihiro Meguro, Takeshi Ikeda
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Patent number: 7504760Abstract: A surface acoustic wave element having power resistance is provided. In the surface acoustic wave element, upper dispersion preventing layers and side dispersion preventing layers each made of metal nitride are provided between interdigital transducer electrode portions and an insulating layer. Further, lower dispersion preventing layers made of metal nitride are provided between the interdigital transducer electrode portions and a piezoelectric substrate. If dispersion preventing layers made of ‘metal nitride’ are provided between the interdigital transducer electrode portions and the insulating layer, even though the insulating layer is formed, it is possible to prevent voids from being generated in the interdigital transducer electrode portions, unlike a related art. Therefore, the power resistance can be improved.Type: GrantFiled: September 27, 2005Date of Patent: March 17, 2009Assignee: Alps Electric Co., Ltd.Inventors: Haruhiko Fujimoto, Takeshi Ikeda, Toshihiro Meguro, Satoshi Waga, Kyosuke Ozaki
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Patent number: 7180223Abstract: There is provided a surface acoustic wave device which can prevent a breakage of electrodes and electrical breaks, decrease an insertion loss of elements, and enhance a Q-factor of resonators. Interdigital electrode sections and each have a laminated structure of a base layer made of TiN (titanium nitride) or TiOxNy and a main electrode layer deposited to come in contact with an upper surface of the base layer. The main electrode layer is deposited such that a {111} plane as a closest-packed plane of the main electrode layer has a constant gradient with respect to a surface of a substrate, and thus electromigration or stress migration can be suppressed in the interdigital electrode sections.Type: GrantFiled: February 3, 2005Date of Patent: February 20, 2007Assignee: Alps Electric Co., Ltd.Inventors: Kyosuke Ozaki, Makoto Sasaki, Haruhiko Fujimoto, Satoshi Waga
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Publication number: 20060273687Abstract: First base layers made of TiN or TiOxNy (where, 0<x<0.2, x+y=1) and second base layers made of Cr are provided between interdigital transducer portions and a piezoelectric substrate, and accordingly, it is possible to prevent voids from being generated in the interdigital transducer portions, which improves a power resistance of the surface acoustic wave device. In addition, since it is possible to prevent the voids from being generated in the interdigital transducer portions, it is possible to suppress the resistance of the interdigital transducer portions from increasing, which can reduce the loss of power. In addition, it is also possible to reduce the variations in a serial resonance frequency and a parallel resonance frequency.Type: ApplicationFiled: April 21, 2006Publication date: December 7, 2006Inventors: Haruhiko Fujimoto, Kyosuke Ozaki, Satoshi Waga, Toshihiro Meguro, Takeshi Ikeda
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Publication number: 20060076851Abstract: A surface acoustic wave element having power resistance is provided. In the surface acoustic wave element, upper dispersion preventing layers and side dispersion preventing layers each made of metal nitride are provided between interdigital transducer electrode portions and an insulating layer. Further, lower dispersion preventing layers made of metal nitride are provided between the interdigital transducer electrode portions and a piezoelectric substrate. If dispersion preventing layers made of ‘metal nitride’ are provided between the interdigital transducer electrode portions and the insulating layer, even though the insulating layer is formed, it is possible to prevent voids from being generated in the interdigital transducer electrode portions, unlike a related art. Therefore, the power resistance can be improved.Type: ApplicationFiled: September 27, 2005Publication date: April 13, 2006Inventors: Haruhiko Fujimoto, Takeshi Ikeda, Toshihiro Meguro, Satoshi Waga, Kyosuke Ozaki
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Patent number: 7026743Abstract: A surface acoustic wave device includes a piezoelectric substrate and an electrode section, disposed on the piezoelectric substrate, having a thin-film structure. The electrode section includes interdigital electrodes and junction electrodes connected to the interdigital electrodes. The interdigital electrodes each include corresponding first base layers containing Ta and Cu layers or Cu—M alloy layers each disposed on the corresponding first base layers, wherein M represents one or more elements selected from the group consisting of Ag, Sn, and C.Type: GrantFiled: October 21, 2003Date of Patent: April 11, 2006Assignee: Alps Electric Co., Ltd.Inventors: Haruhiko Fujimoto, Satoshi Waga, Takashi Sato, Kyosuke Ozaki, Yutaka Matsuo, Takeshi Ikeda, Kazuaki Kaneko, Takuo Kudo
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Publication number: 20050174012Abstract: There is provided a surface acoustic wave device which can prevent a breakage of electrodes and electrical breaks, decrease an insertion loss of elements, and enhance a Q-factor of resonators. Interdigital electrode sections and each have a laminated structure of a base layer made of TiN (titanium nitride) or TiOxNy and a main electrode layer deposited to come in contact with an upper surface of the base layer. The main electrode layer is deposited such that a {111} plane as a closest-packed plane of the main electrode layer has a constant gradient with respect to a surface of a substrate, and thus electromigration or stress migration can be suppressed in the interdigital electrode sections.Type: ApplicationFiled: February 3, 2005Publication date: August 11, 2005Inventors: Kyosuke Ozaki, Makoto Sasaki, Haruhiko Fujimoto, Satoshi Waga
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Patent number: 6838807Abstract: IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by ?, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/? of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaO3 substrate whose rotational cut angle ? from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.Type: GrantFiled: November 5, 2003Date of Patent: January 4, 2005Assignee: Alps Electric Co., Ltd.Inventors: Kyosuke Ozaki, Satoshi Waga, Haruhiko Fujimoto, Takashi Sato, Yutaka Matsuo, Takeshi Ikeda, Kazuaki Kaneko, Takuo Kudo
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Publication number: 20040180632Abstract: IDT electrodes are formed by a Cu alloy. When the wavelength of a SAW propagating in the direction of the X axis of a piezoelectric substrate is indicated by &lgr;, and when the thickness of the IDT electrodes is indicated by H, the standardized thickness H/&lgr; of the IDT electrodes ranges from 0.045 to 0.070, and the piezoelectric substrate is a rotated Y-cut LiTaO3 substrate whose rotational cut angle &thgr; from the Y axis to the Z axis around the X axis ranges from 52.0° to 58.0°. With this arrangement, the reflection coefficient S11 becomes 0.88 or higher.Type: ApplicationFiled: November 5, 2003Publication date: September 16, 2004Applicant: Alps Electric Co., Ltd.Inventors: Kyosuke Ozaki, Satoshi Waga, Haruhiko Fujimoto, Takashi Sato, Yutaka Matsuo, Takeshi Ikeda, Kazuaki Kaneko, Takuo Kudo
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Publication number: 20040086740Abstract: A surface acoustic wave device includes a piezoelectric substrate and an electrode section, disposed on the piezoelectric substrate, having a thin-film structure. The electrode section includes interdigital electrodes and junction electrodes connected to the interdigital electrodes. The interdigital electrodes each include corresponding first base layers containing Ta and Cu layers or Cu-M alloy layers each disposed on the corresponding first base layers, wherein M represents one or more elements selected from the group consisting of Ag, Sn, and C.Type: ApplicationFiled: October 21, 2003Publication date: May 6, 2004Applicant: Alps Electric Co., Ltd.Inventors: Haruhiko Fujimoto, Satoshi Waga, Takeshi Sato, kyosuke Ozaki, Yutaka Matsuo, Takeshi Ikeda, Kazuaki Kaneko, Takuo Kudo