Abstract: An information processing system includes an acquisition unit that acquires excretion information, based on imaging data captured by an image capture apparatus installed in such a way as to include, in an image capture range, an excretion range of excrement in a toilet bowl of a toilet, a generation unit that generates presentation information to be output, based on the excretion information, and a control unit. The acquisition unit acquires information that indicates whether a foreign body being an object other than feces and urine is included in the imaging data as a subject excluding the toilet bowl and washing liquid for the toilet bowl. When information including the foreign body is acquired, the control unit outputs a stop command for stopping a washing function of the toilet bowl to the toilet bowl side, and the generation unit generates alert information as at least a part of the presentation information.

Abstract: A substrate processing method includes: exhausting a first space in a processing container by an exhaust mechanism, which is configured to exhaust the first space via a gap by exhausting a second space in the processing container, or configured to exhaust the first space in a state in which a seal gas is caused to flow from the second space to the first space via the gap; and executing the substrate processing on a substrate while causing, by a driving mechanism configured to move a stage, a position of the stage to be changed such that a width of the gap becomes uniform in a time average.

Abstract: A substrate processing method includes: a substrate processing process performing a substrate processing on a substrate in a state in which a stage is tilted by a drive mechanism so that a central axis of the stage, which passes through a center of a mounting surface mounted with the substrate and extends in a direction perpendicular to the mounting surface, forms a first angle other than 0° with respect to a predetermined reference axis of a shower plate, which extends in a vertical direction, while changing a position of the stage by the drive mechanism so that the central axis rotates around the reference axis while maintaining the first angle with respect to the reference axis.

Abstract: A method of transporting a workpiece includes steps of: (a) adjusting an inclination of a stage including a placement surface on which the workpiece is to be placed such that the placement surface is inclined with respect to a horizontal plane; (b) receiving the workpiece from a transport apparatus configured to transport the workpiece by raising lift pins provided in the stage, before or after step (a); (c) placing the workpiece on the inclined placement surface by performing at least one of lowering the lift pins and raising the stage; and (d) adjusting the inclination of the stage such that the placement surface on which the workpiece is placed is parallel to the horizontal plane.

Abstract: A plasma processing apparatus includes: a chamber; a stage provided in the chamber; a microwave transmission window provided on a wall surface of the chamber; a microwave supply configured to supply microwaves into the chamber via the microwave transmission window; a shower plate configured to partition an interior of the chamber into a plasma generation space, which is a region where the microwave transmission window is disposed, and a processing space, which is a region where the stage is disposed; and a protrusion protruding from the shower plate into the plasma generation space and including a conductor in at least a portion of the protrusion.

Abstract: A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

Abstract: A plasma processing apparatus includes: a processing container in which a stage is accommodated and including an opening formed above the stage; a lid member for sealing the opening and including: at least one through-hole formed in a region facing the stage and in which a radiation part for radiating microwaves is arranged; a protruded portion formed on a first surface facing an interior of the processing container to protrude toward the interior of the processing container along an edge of the opening; a flow path formed inside the protruded portion; gas holes formed on the first surface to communicate with the flow path; and a supply port formed on a second surface facing an exterior of the processing container to communicate with the flow path; and a remote plasma unit connected to the supply port and for plasmarizing a cleaning gas and supply the same to the supply port.

Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Abstract: A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas.

Abstract: A raw material supplying device includes a raw material supplying pipe including a vertically extending rising pipe. The device further includes a first raw material discharging pipe which is provided to branch from the lower end of the rising pipe. The device further includes a cleaning fluid supplying pipe configured to supply one of purge gas and cleaning solution in order to extrude and discharge liquid raw material in the raw material supplying pipe to the first raw material discharging pipe. The device further includes a first raw material supplying valve and a first raw material discharging valve which are respectively provided in the side of the repository and the first raw material discharging pipe other than a connection portion of the raw material supplying pipe with the first raw material discharging pipe. The device further includes a cleaning fluid supplying valve provided in the cleaning fluid supplying pipe.

Abstract: A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable.

Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Abstract: A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas.

Abstract: A raw material supplying device includes a raw material supplying pipe including a vertically extending rising pipe. The device further includes a first raw material discharging pipe which is provided to branch from the lower end of the rising pipe. The device further includes a cleaning fluid supplying pipe configured to supply one of purge gas and cleaning solution in order to extrude and discharge liquid raw material in the raw material supplying pipe to the first raw material discharging pipe. The device further includes a first raw material supplying valve and a first raw material discharging valve which are respectively provided in the side of the repository and the first raw material discharging pipe other than a connection portion of the raw material supplying pipe with the first raw material discharging pipe. The device further includes a cleaning fluid supplying valve provided in the cleaning fluid supplying pipe.

Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

Abstract: A vertical heat processing apparatus for forming a high dielectric constant film of a metal oxide by deposition includes a reaction container configured to accommodate a plurality of target substrates at intervals in a vertical direction; a support member configured to support the target substrates inside the reaction container; a heater configured to heat the target substrates inside the reaction container; an exhaust system configured to exhaust gas from inside the reaction container; and a gas supply system configured to supply a metal source gas and an oxidizing gas into the reaction container, wherein the gas supply system includes a gas nozzle disposed inside the reaction container, and the gas nozzle is made of a metal consisting mainly of titanium.

Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

Abstract: A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.