Abstract: A reservation management method includes the following executed using a computer: obtaining item information from at least one compartment of a delivery cabinet or a communication terminal via a network, the item information indicating presence or absence of an item in the at least one compartment; and accepting a reservation for a first compartment from a delivery service provider, and declining a reservation for a second compartment from the delivery service provider, in a first time period starting after a first time from a current time, the first compartment being a compartment among the at least one compartment for which the item information indicates the absence of the item, the second compartment being a compartment among the at least one compartment for which the item information indicates the presence of the item.

Abstract: The disclosure relates to a method for the fabrication of a thin-film solid-state battery with Ni(OH)2 electrode, battery cell, and battery. One example embodiment is a method for fabricating a thin-film solid-state battery cell on a substrate comprising a first current collector layer. The method includes depositing above the first current collector layer a first electrode layer. The first electrode layer is a nanoporous composite layer that includes a plurality of pores having pore walls. The first electrode layer includes a mixture of a dielectric material and an active electrode material. The method also includes depositing above the first electrode layer a porous dielectric layer. The method further includes depositing directly on the porous dielectric layer a second electrode layer. Depositing the second electrode layer includes depositing a porous Ni(OH)2 layer using an electrochemical deposition process.

Abstract: The disclosure relates to a method for the fabrication of a thin-film solid-state battery with Ni(OH)2 electrode, battery cell, and battery. One example embodiment is a method for fabricating a thin-film solid-state battery cell on a substrate comprising a first current collector layer. The method includes depositing above the first current collector layer a first electrode layer. The first electrode layer is a nanoporous composite layer that includes a plurality of pores having pore walls. The first electrode layer includes a mixture of a dielectric material and an active electrode material. The method also includes depositing above the first electrode layer a porous dielectric layer. The method further includes depositing directly on the porous dielectric layer a second electrode layer. Depositing the second electrode layer includes depositing a porous Ni(OH)2 layer using an electrochemical deposition process.

Abstract: An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

Abstract: A charge storage device includes: a first electrode; a second electrode; a charge storage layer disposed between the first electrode and the second electrode; and an oxide layer disposed between the second electrode and the charge storage layer. The charge storage layer contains a mixture of semiconductor particles and insulator particles. An average particle size of the insulator particles is greater than or equal to the average particle size of the semiconductor particles.

Abstract: An electrical storage device includes: a conductive anode collector; a conductive cathode collector; an anode between the anode collector and the cathode collector, the anode containing a mixture of an insulating material and an oxide of cerium; and a cathode between the cathode collector and the anode.

Abstract: An electricity storage device includes a first electrode, a second electrode, an electricity storage layer, and a p-type semiconductor layer. The electricity storage layer is placed between the first electrode and the second electrode. The electricity storage layer contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer is placed between the electricity storage layer and the second electrode. The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.

Abstract: An electrical storage device includes a stack structure including a conductive first electrode layer, a conductive second electrode layer, a charging layer disposed between the first electrode layer and the second electrode layer, the charging layer including a mixture containing an insulating material and at least one metal oxide selected from the group consisting of niobium oxide, tantalum oxide and molybdenum oxide, and an electron barrier layer disposed between the charging layer and the second electrode layer.

Abstract: An information recording medium (100) of the present invention includes a substrate (1) and a recording layer provided on the substrate (1) and having optical properties that can be changed by irradiation with a laser beam. The recording layer is formed of a plurality of arrayed minute recording regions (e.g., phase-change particles (2)). A part or all of the recording region is made of a recording material containing Te and O. The recording region has a length of 30 nm or less in an information recording direction. Preferably, the recording material further contains an element M, where M is at least one element selected from the group consisting of Pd, Au, and Pt.

Abstract: An information recording medium (100) of the present invention includes a substrate (1) and a recording layer provided on the substrate (1) and having optical properties that can be changed by irradiation with a laser beam. The recording layer is formed of a plurality of arrayed minute recording regions (e.g., phase-change particles (2)). A part or all of the recording region is made of a recording material containing Te and O. The recording region has a length of 30 nm or less in an information recording direction. Preferably, the recording material further contains an element M, where M is at least one element selected from the group consisting of Pd, Au, and Pt.

Abstract: A low-cost information recording medium is provided by which good recording quality can be obtained even when information is recorded thereon in a high density using a blue laser. The recording medium has a recording layer which comprises Sb, O and M. A content of O atoms is 30 atom % or more but not more than 55 atom %, a content of M atoms is 5 atom % or more but not more than 35 atom %, and a content of Sb atoms is 20 atom % or more but not more than 55 atom %. The recording layer does not contain Au, Pt and Pd.

Abstract: The information recording medium 3 comprises an information layer having a metal layer 5 on a substrate 4, wherein concavo-convex portion is formed in the substrate to give main information such as image and voice, and the metal layer contains Al, Si and M (wherein M is at least one element selected from a group consisting of Cr and Ni) and enables sub-information to be additionally recorded therein at low cost by laser-beam 7 irradiation.

Abstract: In an information recording medium including a substrate and an information layer having a recording layer, on and from which information is recorded and reproduced by laser beam application, the recording layer is made from a Te—O-MA-MB material consisting of Te, O, MA (wherein MA is at least one element selected from Au and Pd) and MB (wherein MB is at least one element selected from Ag, Cu and Ni) with a content of Te of 10 atom % to 50 atom %, the content of O of 40 atom % to 70 atom %, the content of MA of 3 atom % to 15 atom %, and the content of MB of 3 atom % to 15 atom %. This constitution provides a low-cost information recording medium which enables high-density recording and stable reproduction of recorded data for a long period of term.

Abstract: The recording/reproducing quality of a multilayer optical information recording medium deteriorate not only due to interference from other layers caused by light converging on other information layers but also due to stray light converging on the surface of a protective layer and stray light that does not converge on other information layers but rather returns to an optical head through the same optical path as the reproducing signal. The thickness composition of intermediate layers (106, 107, and 108) and the protective layer (109) in a four-layer optical information recording medium are set so as to eliminate the influence of interference caused by stray light from other layers reflected up to three times.

Abstract: An information recording medium (9) comprises an information layer (9a) in which concavo-convex marks are formed, and a recording layer (13), contained within the information layer (9a), in which added marks are formed by optical properties changing through laser irradiation, and that contains Te, O, and M (where M is at least one element selected from a group consisting of Pd, Au, Pt, Ag, Cu, and Ni). In this information recording medium (9), a pre-laser irradiation reflectance Ra and a post laser irradiation reflectance Rb fulfill 1.0<Rb/Ra<1.1.

Abstract: The information recording medium 3 comprises an information layer having a metal layer 5 on a substrate 4, wherein concavo-convex portion is formed in the substrate to give main information such as image and voice, and the metal layer contains Al, Si and M (wherein M is at least one element selected from a group consisting of Cr and Ni) and enables sub-information to be additionally recorded therein at low cost by laser-beam 7 irradiation.

Abstract: An optical information recording medium that can simultaneously achieve both a high transmittance and high signal quality of an information layer, improve the reliability of long-term conservation, and reduce the manufacturing cost, and a manufacturing method thereof are provided. In an optical information recording medium including at least one information layer on a substrate, at least one of the information layers has a recording layer and a dielectric layer, the recording layer contains Te, O, and M (M is one or a plurality of elements selected from Au, Pd, and Pt) as major components, the dielectric layer has a thermal conductivity of 0.01 W/K·cm or more, and the dielectric layer has an extinction coefficient of 0 through 1.0 inclusive.

Abstract: The information recording medium of the present invention is provided with a substrate and an information layer including a recording layer. Rerecording and reproducing of information are performed by irradiating the information layer with a laser beam. The recording layer contains, as its main component, a material composed of Te, O, and M, where M denotes at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au. In the material, the content of Te atom is 1 to 19 atom %, the content of O atom is 20 to 70 atom % (preferably 40 to 70 atom %), the content of M atom is 11 to 79 atom % (preferably 11 to 59 atom %, and more preferably more than 35 atom %). The material is, for example, is indicated as the region enclosed by A, B, C, and D, preferably by C, D, E, and F, and more preferably by E, F, H, and G, in the composition diagram of a ternary material of Te—O—Pd shown in FIG. 1.

Abstract: A write-once information recording medium having a high recording sensitivity and reliability with respect to long-term storage is provided. The information recording medium has a recording layer on a substrate, to which information can be recorded and from which information can be reproduced by irradiating the recording layer with laser light or applying electrical energy to the recording layer. The recording layer contains, as its primary components, TeO2 and a material A, where the material A is a material that exhibits a eutectic reaction with TeO2.

Abstract: A multilayer information storage medium according to the present invention includes: a substrate; at least three information storage layers, which are stacked one upon the other on the substrate; a plurality of transparent layers, each of which is arranged between its associated adjacent ones of the information storage layers; and a transparent coating layer. At least two of the transparent layers have mutually different thicknesses. If a laser beam with a wavelength of 400 nm to 410 nm is incident perpendicularly on the medium through the transparent coating layer, two of the information storage layers that sandwich the thinnest one of the transparent layers have a higher returning light intensity and/or a higher degree of modulation than the other information storage layers.