Patents by Inventor Haruhiko Kurosaki

Haruhiko Kurosaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of preparing oxide crystal film/substrate composite and solution for use therein
    Patent number: 7160820
    Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: January 9, 2007
    Assignees: International Superconductivity Technology Center, the Juridical Foundation, Fujikura Ltd.
    Inventors: Toshihiro Suga, Yasuji Yamada, Toshihiko Maeda, Seok Beom Kim, Haruhiko Kurosaki, Yutaka Yamada, Izumi Hirabayashi, Yasuhiro Iijima, Tomonori Watanabe, Hisashi Yoshino, Koji Muranaka
  • Method of preparing oxide crystal film/substrate composite and solution for use therein
    Publication number: 20040214450
    Abstract: There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
    Type: Application
    Filed: June 7, 2004
    Publication date: October 28, 2004
    Inventors: Toshihiro Suga, Yasuji Yamada, Toshihiko Maeda, Seok Beom Kim, Haruhiko Kurosaki, Yutaka Yamada, Izumi Hirabayashi, Yasuhiro Iijima, Tomonori Watanabe, Hisashi Yoshino, Koji Muranaka