Patents by Inventor Haruhiko Okazaki

Haruhiko Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150200340
    Abstract: According to one embodiment, a light-emitting device includes a light-emitting element. A first film covers the light-emitting element. A fluorescent film is provided on the first film and partially covers a region above a light extraction face of the light-emitting element. A transparent section is provided on the fluorescent film.
    Type: Application
    Filed: August 29, 2014
    Publication date: July 16, 2015
    Inventors: Haruhiko OKAZAKI, Takayoshi FUJII
  • Patent number: 9082938
    Abstract: According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: July 14, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayoshi Fujii, Haruhiko Okazaki, Toshihiro Kuroki, Toshitake Kitagawa
  • Publication number: 20150076543
    Abstract: According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.
    Type: Application
    Filed: March 13, 2014
    Publication date: March 19, 2015
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayoshi FUJII, Haruhiko OKAZAKI, Toshihiro KUROKI, Toshitake KITAGAWA
  • Patent number: 8334587
    Abstract: In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.
    Type: Grant
    Filed: April 6, 2007
    Date of Patent: December 18, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Inoue, Haruhiko Okazaki, Hiroyuki Nakashima
  • Publication number: 20120211766
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: April 30, 2012
    Publication date: August 23, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 8193693
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: June 5, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Publication number: 20110241538
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: June 13, 2011
    Publication date: October 6, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 7982384
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: July 19, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 7675227
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: March 9, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 7583019
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: September 1, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 7355212
    Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: April 8, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Okazaki, Hideto Sugawara
  • Publication number: 20080067536
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: November 15, 2007
    Publication date: March 20, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi KOMOTO, Masayuki ISHIKAWA, Tadashi UMEJI, Kuniaki KONNO, Koichi NITTA, Haruhiko OKAZAKI
  • Publication number: 20080042554
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: October 10, 2007
    Publication date: February 21, 2008
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Publication number: 20070241342
    Abstract: In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.
    Type: Application
    Filed: April 6, 2007
    Publication date: October 18, 2007
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiro INOUE, Haruhiko OKAZAKI, Hiroyuki NAKASHIMA
  • Patent number: 7221002
    Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
    Type: Grant
    Filed: October 4, 2004
    Date of Patent: May 22, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Okazaki, Hideto Sugawara
  • Patent number: 7179671
    Abstract: A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.
    Type: Grant
    Filed: September 21, 2004
    Date of Patent: February 20, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Okazaki, Hideto Sugawara
  • Publication number: 20060274227
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: August 16, 2006
    Publication date: December 7, 2006
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Publication number: 20060274228
    Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
    Type: Application
    Filed: August 16, 2006
    Publication date: December 7, 2006
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
  • Patent number: 7138664
    Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: November 21, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Okazaki, Hideto Sugawara
  • Patent number: 7138665
    Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: November 21, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Haruhiko Okazaki, Hideto Sugawara