Patents by Inventor Haruhiko Okazaki
Haruhiko Okazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150200340Abstract: According to one embodiment, a light-emitting device includes a light-emitting element. A first film covers the light-emitting element. A fluorescent film is provided on the first film and partially covers a region above a light extraction face of the light-emitting element. A transparent section is provided on the fluorescent film.Type: ApplicationFiled: August 29, 2014Publication date: July 16, 2015Inventors: Haruhiko OKAZAKI, Takayoshi FUJII
-
Patent number: 9082938Abstract: According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.Type: GrantFiled: March 13, 2014Date of Patent: July 14, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Takayoshi Fujii, Haruhiko Okazaki, Toshihiro Kuroki, Toshitake Kitagawa
-
Publication number: 20150076543Abstract: According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.Type: ApplicationFiled: March 13, 2014Publication date: March 19, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Takayoshi FUJII, Haruhiko OKAZAKI, Toshihiro KUROKI, Toshitake KITAGAWA
-
Patent number: 8334587Abstract: In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.Type: GrantFiled: April 6, 2007Date of Patent: December 18, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhiro Inoue, Haruhiko Okazaki, Hiroyuki Nakashima
-
Publication number: 20120211766Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: April 30, 2012Publication date: August 23, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 8193693Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: GrantFiled: June 13, 2011Date of Patent: June 5, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Publication number: 20110241538Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: June 13, 2011Publication date: October 6, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 7982384Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: GrantFiled: August 16, 2006Date of Patent: July 19, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 7675227Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: GrantFiled: November 15, 2007Date of Patent: March 9, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 7583019Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: GrantFiled: August 16, 2006Date of Patent: September 1, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 7355212Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.Type: GrantFiled: May 4, 2005Date of Patent: April 8, 2008Assignee: Kabushiki Kaisha ToshibaInventors: Haruhiko Okazaki, Hideto Sugawara
-
Publication number: 20080067536Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: November 15, 2007Publication date: March 20, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi KOMOTO, Masayuki ISHIKAWA, Tadashi UMEJI, Kuniaki KONNO, Koichi NITTA, Haruhiko OKAZAKI
-
Publication number: 20080042554Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: October 10, 2007Publication date: February 21, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi KOMOTO, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Publication number: 20070241342Abstract: In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.Type: ApplicationFiled: April 6, 2007Publication date: October 18, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuhiro INOUE, Haruhiko OKAZAKI, Hiroyuki NAKASHIMA
-
Patent number: 7221002Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.Type: GrantFiled: October 4, 2004Date of Patent: May 22, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Haruhiko Okazaki, Hideto Sugawara
-
Patent number: 7179671Abstract: A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.Type: GrantFiled: September 21, 2004Date of Patent: February 20, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Haruhiko Okazaki, Hideto Sugawara
-
Publication number: 20060274227Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: August 16, 2006Publication date: December 7, 2006Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Publication number: 20060274228Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.Type: ApplicationFiled: August 16, 2006Publication date: December 7, 2006Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi Komoto, Masayuki Ishikawa, Tadashi Umeji, Kuniaki Konno, Koichi Nitta, Haruhiko Okazaki
-
Patent number: 7138664Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.Type: GrantFiled: September 22, 2004Date of Patent: November 21, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Haruhiko Okazaki, Hideto Sugawara
-
Patent number: 7138665Abstract: An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.Type: GrantFiled: September 22, 2004Date of Patent: November 21, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Haruhiko Okazaki, Hideto Sugawara