Patents by Inventor Haruhiko Yoshioka

Haruhiko Yoshioka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4812201
    Abstract: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.
    Type: Grant
    Filed: July 15, 1987
    Date of Patent: March 14, 1989
    Assignee: Tokyo Electron Limited
    Inventors: Hiroyuki Sakai, Kazutoshi Yoshioka, Kimiharu Matsumura, Keisuke Shigaki, Yutaka Amemiya, Shunichi Iimuro, Haruhiko Yoshioka, Teruhiko Onoe