Abstract: This invention provides a charged beam projection mask, a charged beam exposure apparatus, and the like which prevent variations in exposure dose and a positional error of a pattern projected on a wafer, thereby improving a pattern precision. In the charged beam mask, strut portions separating mask pattern regions constituting a stripe in one direction have a width larger than the width of a beam on the mask.

Abstract: This invention relates to an electron optical system array having a plurality of electron lenses. The electron optical system array includes a plurality of electrodes arranged along the paths of a plurality of charged-particle beams. Each of the plurality of electrodes has a membrane in which a plurality of apertures are formed on the paths of the plurality of charged-particle beams, and a support portion which supports the membrane. At least two of the plurality of electrodes are arranged to form a nested structure.

Abstract: This invention relates to an electron optical system array having a plurality of electron lenses. The electron optical system array includes a plurality of electrode structures which are arranged along the paths of a plurality of charged-particle beams and have pluralities of apertures on the paths of the plurality of charged-particle beams. At least one of the plurality of electrode structures includes a substrate having a plurality of apertures for transmitting the plurality of charged-particle beams, and a plurality of electrodes extending from the side surfaces of the plurality of apertures to the peripheries of the plurality of apertures. At least the surface of the substrate is insulated.

Abstract: A multi-electron beam source comprises an electron emitting element part including: a plurality of electron emitting elements provided two-dimensionally in a matrix-like arrangement on a substrate; opposing terminals of electron emitting elements arranged adjacently in the column direction thereof being electrically connected to each other; terminals on the same side of all the electron emitting elements in the same row being electrically connected; and the plurality of electron emitting elements being arranged in "m" rows, "m" representing a number of two or more, and a driving circuit part for driving said electron emitting element part. The multi-electron beam source has means for removing a spike noise superposed onto the driving pulse generated by said driving cirucit part.

Abstract: An image forming apparatus having a plurality of electron emitting devices and luminescent members are arranged into a matrix formed on one surface of a substrate. As rows of electron emitting devices are successively driven, each luminescent member emits light according to a voltage applied to it or other members in accordance with an image information signal when irradiated with a light beam from one of the electron emitting devices mated with it.

Abstract: An electron beam generating device has at least one electron emitting element and at least one modulation electrode on a substrate. The modulation electrode may be provided on the same or reverse side of the substrate as or to the side bearing the electron emitting element. The electron emitting element is constituted of a lower potential electrode, a higher potential electrode and an electron emitting portion between the electrodes. The lower potential electrode has a different dimension than the higher potential electrode, or the substrate region bearing the electron emitting element has a different thickness than the other region, depending on the type of arrangement of the electron emitting element and the modulation electrode.

Abstract: An electron-beam generator comprises an electron-emitting device and a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device in response to an information signal. The modulating electrode and the electron-emitting device are laminated so as to interpose an insulating substrate therebetween.

Abstract: A multi-electron beam source comprises an electron emitting element part including: a plurality of electron emitting elements provided two-dimensionally in a matrix-like arrangement on a substrate; opposing terminals of electron emitting elements arranged adjacently in the column direction thereof being electrically connected to each other; terminals on the same side of all the electron emitting elements in the same row being electrically connected; and the plurality of electron emitting elements being arranged in "m" rows, "m" representing a number of two or more, and a driving circuit part for driving said electron emitting element part. The multi-electron beam source has means for removing a spike noise superposed onto the driving pulse generated by said driving circuit part.

Abstract: A multi-electron beam source comprising an electron-emitting element part includes: a plurality of electron-emitting elements provided two-dimensionally in a matrix-like arrangement on a substrate, with opposing terminals of the electron-emitting elements arranged adjacently in the column direction thereof being electrically connected to each other, terminals on the same side of all the electron-emitting elements in the same row being electrically connected, and the plurality of electron-emitting elements being arranged in "m" rows, "m" representing a number of two or more. In addition, a driving circuit drives the electron-emitting element part, grid electrodes modulate electron beams emitted from the electron-emitting elements, and a cut-off circuit cuts off the electron beams caused by spike noises superposed on driving pulse generated by the driving circuit part.

Abstract: An electron beam apparatus for applying an electron beam from an electron source onto a target plane is characterized by comprising one sheet of electrode disposed between said electron source for emitting the electron beam in parallel or substantially parallel and a target arrangement position, and a power source for supplying a desired voltage to said electrode.

Abstract: An electron-beam generator includes an electron-emitting device and a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device in response to an information signal. The modulating electrode and the electron-emitting device are laminated so as to interpose an insulating substrate therebetween.

Abstract: A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

Abstract: A fine working method of a crystalline material comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of the ion injection region by applying a chemical etching treatment. The method includes performing ion injection where no removal of the predetermined region occurs even if the crystalline material is exposed to an etchant. The predetermined region is removed by injecting an etchant into the ion injection region.

Abstract: A surface conduction electron-emitting device includes a high-potential electrode provided on a substrate surface, an electron-emitting region provided in contact with the periphery of an exposed part of the high-potential electrode, and a low-potential electrode in contact with the periphery of the electron-emitting region. The low-potential electrode may project upward in the thickness direction of the substrate to a higher level than the high-potential electrode. A device for applying a voltage may further provided between the high-potential electrode and low-potential electrode. The low-potential electrode may be divided into plural numbers and potential may be applied to each of the low-potential electrodes independently.