Patents by Inventor Haruka Matsubara

Haruka Matsubara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for growing ?-GAO-based single crystal
    Patent number: 10526721
    Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: January 7, 2020
    Assignees: KOHA CO., LTD., TAMURA CORPORATION
    Inventors: Shinya Watanabe, Kazuyuki Iizuka, Kei Doioka, Haruka Matsubara, Takekazu Masui
  • METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL
    Publication number: 20160032485
    Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.
    Type: Application
    Filed: March 31, 2014
    Publication date: February 4, 2016
    Applicants: KOHA CO., LTD., TAMURA CORPORATION
    Inventors: Shinya WATANABE, Kazuyuki IIZUKA, Kei DOIOKA, Haruka MATSUBARA, Takekazu MASUI
  • METHOD FOR GROWING ß-Ga2O3 SINGLE CRYSTAL
    Publication number: 20140352604
    Abstract: A method for growing a ?-Ga2O3 single crystal, which is capable of effectively suppressing twinning of the using an Edge-defined film-fed growth (EFG) method, includes: a seed crystal brought into contact with a Ga2O3 melt; and the seed crystal is pulled and a ?-Ga2O3 single crystal is grown without performing a necking process. In the method for growing a ?-Ga2O3 single crystal, the widths of the ?-Ga2O3 single crystal are 110% or less of the widths of the seed crystal in all directions.
    Type: Application
    Filed: November 12, 2012
    Publication date: December 4, 2014
    Inventors: Kimiyoshi Koshi, Haruka Matsubara, Shinya Watanabe