Abstract: According to one embodiment, a memory system includes a plurality of nonvolatile memory chips and a controller. The controller manages whether each of the nonvolatile memory chips is in a busy state or not. When one or more requests issued by a host are stored in at least one queue of the host, the controller identifies, from the one or more requests, a first request for a first nonvolatile memory chip that is not in the busy state. The controller executes a process in accordance with the identified first request.

Abstract: An illumination device includes a frame forming part that is provided at at least one position on an end part of a light-emitting panel having a light emission surface or in a vicinity of the light-emitting panel and includes a bright part region and a dark part region, a light source that emits light to be incident upon the frame forming part, and a light amount regulation part that makes intensity of light heading for a space facing the light emission surface from the dark part region weaker than intensity of light heading for the space from the bright part region in the light entering the frame forming part from the light source, or makes the intensity of the light from the bright part region stronger than the intensity of the light from the dark part region in the light entering the frame forming part from the light source.

Abstract: An illumination device that simulates the sky, includes a light source that emits first light; a light-emitting part that allows the first light to enter, guides the entered first light by means of total reflection while scattering the first light, and emits the scattered light from a light emission surface; a back surface reflective part that is provided to face a back surface as a surface of the light-emitting part on a side opposite to the light emission surface and reflects light emitted from the back surface of the light-emitting part; a frame that includes a part situated at least in front of the light emission surface of the light-emitting part; and an optical member that is provided between the light emission surface of the light-emitting part and the part of the frame and reflects a part of the light emitted from the light emission surface of the light-emitting part.

Abstract: An illumination device that simulates the sky, includes a light source that emits first light; a light-emitting part that allows the first light to enter, guides the entered first light by means of total reflection while scattering the first light, and emits the scattered light from a light emission surface; a back surface reflective part that is provided to face a back surface as a surface of the light-emitting part on a side opposite to the light emission surface and reflects light emitted from the back surface of the light-emitting part; a frame that includes a part situated at least in front of the light emission surface of the light-emitting part; and an optical member that is provided between the light emission surface of the light-emitting part and the part of the frame and reflects a part of the light emitted from the light emission surface of the light-emitting part.

Abstract: An illumination device includes a frame forming part that is provided at at least one position on an end part of a light-emitting panel having a light emission surface or in a vicinity of the light-emitting panel and includes a bright part region and a dark part region, a light source that emits light to be incident upon the frame forming part, and a light amount regulation part that makes intensity of light heading for a space facing the light emission surface from the dark part region weaker than intensity of light heading for the space from the bright part region in the light entering the frame forming part from the light source, or makes the intensity of the light from the bright part region stronger than the intensity of the light from the dark part region in the light entering the frame forming part from the light source.

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.