Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; an

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; an

Abstract: A positive resist composition, comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin having a repeating unit containing at least one alicyclic structure, of which solubility in an alkali developer increases under an action of an acid; and (C) an alkali-soluble resin having a siloxane bond as a main chain.

Abstract: A positive resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), (X) an alkali-soluble group, (Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer, (Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and (D) a solvent.

Abstract: An object of the invention is to provide a composition for forming an insulating film which can form an insulating film having a lowered dielectric constant using a hole forming agent, wherein the generation of spaces (voids) in which holes are connected to one another is prevented. The above problem is solved by forming an insulating film using a composition for forming an insulating film, characterized by comprising: (A) a polyphenylene, (B) a styrene polymer, and (C) a block copolymer or a graft copolymer comprising a unit having an affinity to said polyphenylene (A) and a unit having an affinity to said styrene polymer (B).

Abstract: A composition for film formation which enables formation of an insulating film having excellent resistance to cracking and low relative dielectric constant and exhibiting stable dielectric constant for a long term even after film formation is provided. The composition for forming a film includes a compound having a cage structure and an aromatic ester compound represented by the following general formula (I): wherein R1 independently represents an alkyl group, and m represents an integer of 1 to 6.

Abstract: A film forming composition is provided that includes a compound represented by Formula (1) below and/or a polymer polymerized using at least a compound represented by Formula (1) below (in Formula (1), each A1 independently denotes a single bond, —CO—, —NR—, —O—, —SO2—, —CH?CH—, —C?C—, or a group in which two or more of the above are combined, A2 and A4 independently denote a monovalent organic group having 1 to 10 carbons, each A3 independently denotes a hydrogen atom or a monovalent organic group having 1 to 10 carbons but excluding a phenyl group, X denotes a tetravalent organic group having 1 to 9 carbons, R denotes a hydrogen atom or an alkyl group having 1 to 10 carbons, each m independently denotes an integer of 1 to 5, each n independently denotes an integer of 1 or more, each p independently denotes an integer of 0 to 4, and each q independently denotes an integer of 0 to 4). There are also provided a film obtained using the film forming composition and an electronic device having the film.

Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, a

Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.

Abstract: It is an object of the present invention to provide a composition capable of forming an insulating film which is endowed with a low dielectric constant, heat resistance, chemical resistance and a high mechanical strength that enables the insulating film to withstand CMP, and which, when an inorganic insulating film layer is provided thereon as an overlying layer, has a high adherence thereto. The composition for forming an insulating film contains polyphenylene, wherein the polyphenylene in an insulating film formed from the composition has a number of carbon atoms (C) and a number of oxygen atoms (O) which together satisfy a condition O/(C+O)?0.050. With the composition, the above object is attained.

Abstract: An insulating film forming composition includes: (A) at least one organic polymer; (B) a solvent; and (C) at least one organic silicone compound represented by any of the following formulas (C-1) to (C-3) as defined in the specification:

Abstract: A film forming composition is provided that includes a compound represented by Formula (1) below and/or a polymer polymerized using at least a compound represented by Formula (1) below (in Formula (1), A1 denotes a 2- to 4-valent organic group, A2 denotes an alkenyl group or an alkynyl group, Ar1 denotes a (2+a1)-valent aryl group, R1 denotes a hydrogen atom or an alkyl group having 1 to 30 carbons, a1 denotes an integer of 1 to 4, and a2 denotes an integer of 2 to 4). There is also provided a film forming composition comprising a compound represented by Formula (2) below and/or a polymer polymerized using at least a compound represented by Formula (2) below (in Formula (2), A3 denotes a 4- or 6-valent organic group, A4 denotes an alkenyl group or an alkynyl group, Ar2 denotes an (a3+1)-valent aryl group, R2 denotes a hydrogen atom or an alkyl group having 1 to 30 carbons, a3 denotes an integer of 1 to 5, and a4 denotes 2 or 3).

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, a

Abstract: A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

Abstract: A production method of an insulating film forming composition includes a process of filtering a composition through a filter made of polyethylene or nylon.

Abstract: A composition includes at least one kind polymer, each of which includes a repeating unit(s) derived from at least one compound selected from the group consisting of compounds represented by the following formulas (I) to (IV): R4Si??(I) R3Si—(X—SiR2)m—X—Si—R3??(II) *—(X—SiR2)n—*??(III) m.RSi(O0.5)3??(IV) wherein the symbols in the formulas are defined in the specification.

Abstract: A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, a

Abstract: A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; an