Patents by Inventor Haruki SUWA

Haruki SUWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THREE-DIMENSIONAL MEMORY DEVICE INCLUDING CONTACT VIA STRUCTURES FOR MULTI-LEVEL STEPPED SURFACES AND METHODS FOR FORMING THE SAME
    Publication number: 20220302153
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing a terrace region having a plurality of steps, memory stack structures extending through the alternating stack, a retro-stepped dielectric material portion overlying the terrace region, first laterally isolated contact structures including a respective first contact via structure and a respective first dielectric spacer, and second laterally isolated contact structures including a respective second contact via structure and a respective second dielectric spacer. The respective first contact via structure contacts a top surface of a respective first electrically conductive layer in the respective step of the plurality of steps.
    Type: Application
    Filed: June 10, 2022
    Publication date: September 22, 2022
    Inventors: Yusuke TANAKA, Haruki SUWA
  • Three-dimensional memory device including contact via structures for multi-level stepped surfaces and methods for forming the same
    Patent number: 11410924
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing steps, memory stack structures extending through the alternating stack, a first contact via structure which contacts a top surface of a respective upper electrically conductive layer in a first step, a first dielectric spacer which does not contact any of the electrically conductive layers other than the respective upper electrically conductive layer in the first step, a second contact via structure which contacts a top surface of a respective lower electrically conductive layer in the first step, and a second dielectric spacer which extends through the respective upper electrically conductive layer, and which contacts the respective lower electrically conductive layer.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: August 9, 2022
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Haruki Suwa, Keisuke Shigemura, Akihiro Shimada
  • THREE-DIMENSIONAL MEMORY DEVICE INCLUDING CONTACT VIA STRUCTURES FOR MULTI-LEVEL STEPPED SURFACES AND METHODS FOR FORMING THE SAME
    Publication number: 20220059454
    Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers containing steps, memory stack structures extending through the alternating stack, a first contact via structure which contacts a top surface of a respective upper electrically conductive layer in a first step, a first dielectric spacer which does not contact any of the electrically conductive layers other than the respective upper electrically conductive layer in the first step, a second contact via structure which contacts a top surface of a respective lower electrically conductive layer in the first step, and a second dielectric spacer which extends through the respective upper electrically conductive layer, and which contacts the respective lower electrically conductive layer.
    Type: Application
    Filed: August 21, 2020
    Publication date: February 24, 2022
    Inventors: Haruki SUWA, Keisuke SHIGEMURA, Akihiro SHIMADA