Abstract: A smoothing capacitor is forcibly discharged, in a state where a battery is disconnected from a high-voltage circuit, first discharge control is initiated to consume electric charges of the smoothing capacitor by an in-vehicle component via a DC/DC converter. Thereafter, when a voltage of the smoothing capacitor is reduced and reaches a specified threshold, second discharge control is executed to forcibly discharge the electric charges in an active discharge circuit. In the case where continuous forced discharge occurs, delay control to delay execution timing of the second discharge control is further executed.

Abstract: A sensor system includes a sensing element, an illumination optical system including a light source, the illumination optical system being configured to obliquely illuminate the sensing element, and a detector device configured to detect light reflected off the sensing element. The sensing element includes a chemical sensing layer configured to change in an optical characteristic in response to contact with a target substance, a reflection layer configured to reflect at least part of incident light, and an intermediate layer located between the reflection layer and the chemical sensing layer. The detector device is configured to separately detect p-polarized light and s-polarized light reflected off the sensing element.

Abstract: To provide a contactor failure determination apparatus capable of appropriately determining failure of a contactor provided in a vehicle, a voltage sensor capable of detecting rising or dropping of a voltage of a second circuit including an external charger is provided. When an external charging request is made, a first control for closing each external charging contactor is executed, a second control for closing a pre-charge contactor is executed after execution of the first control, a third control for closing a second main contactor is executed after execution of the second control, and response to the voltage sensor detecting that the voltage of the second circuit has not risen after execution of the third control, it is determined that at least one of the external charging contactors has failed in an open state.

Abstract: A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Abstract: To provide a contactor failure determination apparatus capable of appropriately determining failure of a contactor provided in a vehicle, a voltage sensor capable of detecting rising or dropping of a voltage of a second circuit including an external charger is provided. When a vehicle start request is made, a first control for closing one external charging contactor is executed, a second control for closing a pre-charge contactor is executed after execution of the first control, a third control for closing a main contactor, which is not parallel with the pre-charge contactor, is executed after execution of the second control, and in response to the voltage sensor detecting that the voltage of the second circuit has risen after execution of the third control, it is determined that the other external charging contactor has failed in a closed state.

Abstract: An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Abstract: A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Abstract: A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

Abstract: An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Abstract: A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

Abstract: A magnetoresistive sensor has a magnetic bias field source that generates an alternating magnetic bias field, a giant magnetoresistive sensing element positioned in the alternating magnetic bias field, and a resistance detecting circuit that detects changes in the electrical resistance of the giant magnetoresistive sensing element caused by the combined action of the alternating magnetic bias field and an external magnetic field. The alternating magnetic bias field enables small external magnetic fields to be detected with high sensitivity.

Abstract: Information is recorded by applying weak and strong magnetic fields to a giant magnetoresistive medium having a pair of ferromagnetic layers, a nonmagnetic interlayer, and an antiferromagnetic layer. The medium preferably has a magnesium-oxide base layer, and may also have an electrode layer. The weak magnetic field magnetizes the ferromagnetic layers in the antiparallel state. The strong magnetic field magnetizes the ferromagnetic layers in the parallel state, which has lower electrical resistance than the antiparallel state. The recorded information is reproduced by detecting the electrical resistance of the medium, either between two electrodes contacting the surface of the medium, or between the electrode layer in the medium and an electrode contacting the surface of the medium.

Abstract: A memory cell has two magnetoresistive memory elements, each with at least two ferromagnetic layers. The electrical resistance of each memory element differs depending on whether the ferromagnetic layers are magnetized in the parallel or antiparallel state. Binary information is stored in the memory cell by supplying currents that generate magnetic fields setting one memory element to the parallel state and the other memory element to the antiparallel state. Alternatively, ternary information is stored, two of the ternary values being stored in the same way as the binary values, and the third ternary value being stored by setting both memory elements to the same state. The stored values are read by comparing the resistances of the two memory elements.

Abstract: A memory cell has two magnetoresistive memory elements, each with at least two ferromagnetic layers. The electrical resistance of each memory element differs depending on whether the ferromagnetic layers are magnetized in the parallel or antiparallel state. Binary information is stored in the memory cell by supplying currents that generate magnetic fields setting one memory element to the parallel state and the other memory element to the antiparallel state. Alternatively, ternary information is stored, two of the ternary values being stored in the same way as the binary values, and the third ternary value being stored by setting both memory elements to the same state. The stored values are read by comparing the resistances of the two memory elements.

Abstract: A magnetic recording medium having a substrate, and an artificial superlattice deposited on the substrate as a vertical magnetization film. The artificial superlattice is a Co/Pt artificial superlattice which is composed of alternate Co and Pt layers deposited on the substrate. The magnetic recording medium is fabricated by the steps of: disposing a Co target and a Pt or Pd target separating from a substrate; performing an RF sputtering to the substrate by alternately facing the substrate with the Co target and the Pt or Pd target by means of periodical movement of the substrate, thereby forming a Co/Pt or Co/Pd artificial superlattice) on the substrate; and performing heat treatment to the Co/Pt or Co/Pd artificial superlattice at a temperature T in the range of 200.degree. C. to 450.degree. C. inclusive.

Abstract: A magnetic recording medium having a triple layered structure including a substrate, a first layer or a soft magnetic thin film of high permeability piled on the substrate, a second layer or a vertical magnetization film piled on the first layer, a third layer or a soft magnetic film of high permeability piled on the second layer. A magnetic recording apparatus alternately switches the magnetization orientations of the second layer or the vertical magnetization film at a recording location where a latent image is to be formed. The first and third layer or the soft magnetic thin films can improve recording efficiency. The field produced by the second layer or the vertical magnetization film causes the third layer or the soft magnetic thin film to be magnetized along the surface of the magnetic recording medium, and this results in the concentration of the flux owing to switching of the magnetization directions. This enables high density recording and improves recording sensitivity and reproducing sensitivity.