Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: A substrate is cleaned by performing a scrubbing process on a surface to be cleaned of the rotating substrate with a roll-shaped cleaning member while holding an outer circumferential surface of the roll-shaped cleaning member in contact with the surface to be cleaned of the substrate across a predetermined contact width. During at least a part of the scrubbing process, the roll-shaped cleaning member is placed at an offset cleaning position where the central axis of the roll-shaped cleaning member is spaced from the central axis of the substrate by a distance which is 0.14 to 0.5 times the contact width. The surface to be cleaned of the substrate is scrubbed with more uniform cleaning intensity while taking into account the cleaning intensity at each position (area) along the radial direction of the surface to be cleaned of the substrate.

Abstract: An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Abstract: A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Abstract: A substrate processing method can completely remove a corrosion inhibitor and/or a metal complex from a surface of a substrate prior to catalyst application processing and/or electroless plating, and can form a protective film having a uniform thickness on the surface of interconnects. The substrate processing method includes preparing a substrate having metal interconnects formed in an electric insulator, carrying out pre-processing of the substrate by bringing a cleaning member into contact with the front surface or both surfaces of the substrate in a wet state and moving them relative to each other while supplying a pre-processing liquid to the front surface or both surfaces of the substrate, and then forming a protective film selectively on surfaces of the metal interconnects by bringing the front surface of the substrate into contact with an electroless plating solution.

Abstract: The present invention provides a substrate processing method which enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing method comprises flattening a copper film and a barrier metal film, both exposed on a surface of a substrate, by using an etching liquid capable of adjusting the etching rate ratio between the copper film and the barrier metal film.

Abstract: The present invention provides a substrate processing method and a substrate processing apparatus which has reproducibility over a surface of a substrate such as a semiconductor wafer and between substrates and can manufacture semiconductor devices or the like with a high yield. According to the present invention, a substrate processing method of forming a protective film selectively on bottom surfaces and side surfaces or exposed surfaces of embedded interconnects formed in a surface of a substrate is characterized by performing a pre-plating process on the substrate, carrying out electroless plating on the surface of the substrate after the pre-plating process to form the protective film selectively on the bottom surfaces and the side surfaces or the exposed surfaces of the interconnects, and bringing the substrate into a dry state after the electroless plating.

Abstract: An object of the present invention to provide an apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. An apparatus for processing a substrate of the present invention, including a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.