Abstract: A leakage current of a MOS transistor that performs writing is reduced. The resistance change memory includes a memory cell, a write drive unit, a write control unit, and a well potential adjustment unit. The memory cell includes a resistance change element. The write drive unit applies a write voltage to the memory cell to perform writing of data. The write control unit outputs a write control signal for controlling the writing to the write drive unit. The well potential adjustment unit adjusts a well potential of a well region in which an element constituting the write drive unit is arranged according to the write voltage at time of the writing.

Abstract: A logic simulation device according to an aspect of the present disclosure includes an operation model of a resistance-change memory element. The resistance-change memory element is provided between two terminals. The operation model includes a register section for holding data, a truth table, and a determining section. The truth table defines a relationship between signal values of the two terminals, and data writing to the register section and data reading from the register section. The determining section performs determination about the data writing and the data reading on the basis of signal values inputted to the two terminals and the truth table.

Abstract: A memory system according to an aspect of the present disclosure includes a soft error generator that generates write data or read data considering a probability error by using a random number.

Abstract: A composition containing a nanosubstance is provided. Since the composition includes a nanosubstance (a), a (meth)acrylate compound (b) including a polar group, and a solvent (c)/polymerizable monomer (i-1), it is capable of being dispersed or solubilized in various solvents such as organic solvents, hydrous organic solvents and in polymerizable monomers without impairing characteristics of the nanosubstance itself wherein the nanosubstance neither separates out nor aggregates during a long-term storage, the composition being excellent in conductivity, film-forming property and moldability and capable of applying to or coating a substrate by a simple method. A coated film or cured film of a composite formed by the composition on at least one surface of the substrate shows high transparency, and the composite is excellent in water resistance, weatherability and hardness.