Patents by Inventor Haruko Tanaka
Haruko Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7892513Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.Type: GrantFiled: January 26, 2009Date of Patent: February 22, 2011Assignee: Sumitomo Electric Industries, Ltd.Inventors: Shinsuke Fujiwara, Hiroaki Yoshida, Ryu Hirota, Koji Uematsu, Haruko Tanaka
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Publication number: 20100229786Abstract: A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).Type: ApplicationFiled: September 19, 2008Publication date: September 16, 2010Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Koji Uematsu, Hiroaki Yoshida, Ryu Hirota, Shinsuke Fujiwara, Haruko Tanaka
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Publication number: 20100189624Abstract: Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm?2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.Type: ApplicationFiled: January 26, 2009Publication date: July 29, 2010Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shinsuke Fujiwara, Hiroaki Yoshida, Ryu Hirota, Koji Uematsu, Haruko Tanaka
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Patent number: 7605006Abstract: In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off.Type: GrantFiled: January 11, 2006Date of Patent: October 20, 2009Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Makoto Morijiri, Haruko Tanaka, Junichi Tanabe
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Publication number: 20070079498Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle ? which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.Type: ApplicationFiled: December 11, 2006Publication date: April 12, 2007Inventors: Masatoshi Arasawa, Haruko Tanaka, Makoto Morijiri, Koichi Nishioka, Shuichi Kojima, Masayasu Kagawa
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Patent number: 7159304Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle ? which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.Type: GrantFiled: February 17, 2004Date of Patent: January 9, 2007Assignee: Hitachi Global Storage Technologies Japan, Ltd.Inventors: Masatoshi Arasawa, Haruko Tanaka, Makoto Morijiri, Koichi Nishioka, Shuichi Kojima, Masayasu Kagawa
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Publication number: 20060172532Abstract: In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45° or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45° or more and ensures lift-off.Type: ApplicationFiled: January 11, 2006Publication date: August 3, 2006Applicant: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Makoto Morijiri, Haruko Tanaka, Junichi Tanabe
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Publication number: 20040158973Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.Type: ApplicationFiled: February 17, 2004Publication date: August 19, 2004Inventors: Masatoshi Arasawa, Haruko Tanaka, Makoto Morijiri, Koichi Nishioka, Shuichi Kojima, Masayasu Kagawa
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Patent number: 6717778Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.Type: GrantFiled: August 17, 2001Date of Patent: April 6, 2004Assignee: Hitachi, Ltd.Inventors: Masatoshi Arasawa, Haruko Tanaka, Makoto Morijiri, Koichi Nishioka, Shuichi Kojima, Masayasu Kagawa
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Publication number: 20020064005Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle &thgr; which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.Type: ApplicationFiled: August 17, 2001Publication date: May 30, 2002Inventors: Masatoshi Arasawa, Haruko Tanaka, Makoto Morijiri, Koichi Nishioka, Shuichi Kojima, Masayasu Kagawa
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Patent number: 5897969Abstract: A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by the patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks.Type: GrantFiled: November 20, 1997Date of Patent: April 27, 1999Assignee: Hitachi, Ltd.Inventors: Akira Taniyama, Makoto Morijiri, Haruko Tanaka, Isamu Yuito, Eiji Ashida, Hiroaki Koyanagi, Hideo Tanabe, Tetsuo Kobayashi
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Patent number: 5701221Abstract: A magnetic domain controlling film for controlling the magnetic domain of a magnetoresistive film is formed by a patterning technique on a lower insulating film formed on a lower shield film. The magnetoresistive film is formed on the magnetic domain controlling film for converting a magnetic signal from a magnetic recording medium into an electrical signal using the magnetoresistive effect. A resist pattern is formed by the lift-off method on the magnetoresistive film in such a fashion as to leave a region of the magnetoresistive film corresponding to the tracks of the magnetic recording medium. A magnetoresistive element is formed by ion milling leaving only the portion of the magnetoresistive film corresponding to the tracks.Type: GrantFiled: April 5, 1995Date of Patent: December 23, 1997Assignee: Hitachi, Ltd.Inventors: Akira Taniyama, Makoto Morijiri, Haruko Tanaka, Isamu Yuito, Eiji Ashida, Hiroaki Koyanagi, Hideo Tanabe, Tetsuo Kobayashi