Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Abstract: Provided is a solid-state imaging device including: a photoelectric conversion unit that converts received light into an electric charge; a memory unit that holds the electric charge; and a light blocking unit that blocks light. The photoelectric conversion unit and the memory unit are formed in a semiconductor substrate. The light blocking unit is formed as a lid portion on the back surface side of the semiconductor substrate, which is the side at which light to the memory unit enters, and is also continuously formed including a first embedded portion and a second embedded portion that are embedded between the photoelectric conversion unit and the memory unit so as to extend in the semiconductor substrate. The first embedded portion is in a transfer region for transferring the electric charge, and the second embedded portion is outside the transfer region. The lid portion includes at least one recessed structure.

Abstract: A computer obtains a chest X-ray image, detects boundary lines in the chest X-ray image using a model constructed through machine learning, sets a third lung area including at least one of a first lung area or a second lung area, extracts a vascular index indicating at least one of thickness or density of at least one pulmonary blood vessel present in an area included in the third lung area, determines whether the area included in the third lung area is in an abnormal state on a basis of the vascular index and a reference index based on indices extracted in advance from an area in chest X-ray images in a normal state corresponding to the area included in the third lung area, and outputs, if determining that the area included in the third lung area is in an abnormal state, information indicating a result of the determination.

Abstract: A light detecting device includes a semiconductor layer having a first surface and a second surface located on opposite sides to each other in a thickness direction, and a photoelectric conversion cell provided in the semiconductor layer and partitioned by a first isolation region. The photoelectric conversion cell includes a first photoelectric conversion region adjacent to a second photoelectric conversion region in plan view and each having a photoelectric conversion unit and a transfer transistor, a second isolation region arranged between the first photoelectric conversion region and the second photoelectric conversion region in plan view and extending in a thickness direction of the semiconductor layer, and an element formation region partitioned on the first surface side of the semiconductor layer by a third isolation region and provided with a pixel transistor. The element formation region extends over the first and second photoelectric conversion regions in plan view.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: An object of the present invention is to provide a therapeutic agent for fatty liver diseases. The above object can be achieved by a therapeutic agent for a fatty liver disease, comprising a compound represented by the following formula (1): or a pharmaceutically acceptable salt thereof.

Abstract: The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels, in which the pixel includes a holding surface on which a biological substance is held, a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, and a wiring layer that is provided below the photoelectric conversion unit.

Abstract: There is provided a biological substance detection chip having high detection accuracy. The present technology provides a biological substance detection chip which is composed of a plurality of pixels in which the pixel includes at least a holding surface on which a biological substance is held and a photoelectric conversion unit that is provided below the holding surface and provided on a semiconductor substrate, wherein a partition wall made of a conductor is provided between the pixels on the holding surface. In addition, the present technology provides a biological substance detection device and a biological substance detection system using the biological substance detection chip.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.

Abstract: An imaging device includes a photoelectric conversion region disposed in a substrate having a first conductivity type. The imaging device includes a first region having a second conductivity type and disposed in the substrate at a first side of the photoelectric conversion region in a cross sectional view, where the first side of the photoelectric conversion region is opposite to a light-incident side of the photoelectric conversion region. The imaging device also includes a second region having the second conductivity type at a higher impurity concentration than the first region and the second region is disposed in the substrate around three sides of the photoelectric conversion region other than the first side of the photoelectric conversion region in the cross-sectional view. The imaging device also includes a light shielding structure that penetrates through the substrate and that is adjacent to sidewalls of the second region.

Abstract: A solid-state imaging device capable of improving image quality is provided. The solid-state imaging device including: a photoelectric conversion unit that converts received light into an electric charge; a memory unit that holds the electric charge transferred from the photoelectric conversion unit; and a light blocking unit that blocks light. The photoelectric conversion unit and the memory unit are formed in a semiconductor substrate. The light blocking unit is formed as a lid portion on the back surface side of the semiconductor substrate, which is the side at which light to the memory unit enters, and is also continuously formed including a first embedded portion and a second embedded portion that are embedded between the photoelectric conversion unit and the memory unit so as to extend in the semiconductor substrate.

Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present technology relates to a solid-state imaging device that includes a sensor substrate having at least a first pixel region and a second pixel region, and a light shielding body substrate which is stacked on an upper surface of the sensor substrate and has a light shielding body surrounding a plurality of light guide paths, in which the plurality of light guide paths includes at least a first light guide path corresponding to the first pixel region, and a second light guide path corresponding to the second pixel region, a plurality of pixels included in the first pixel region has a light shielding structure based on respective pixel positions in the first pixel region, and a plurality of pixels included in the second pixel region has a light shielding structure based on respective pixel positions in the second pixel region.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Abstract: The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.