Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.

Abstract: There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pm,n in the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor T1 for outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor T2 for inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T1; a discharging transistor T3 for discharging the charges of the capacitive element C; and a selecting transistor T4 for selectively outputting a voltage value output from the amplifying transistor T1 to a wiring Ln.

Abstract: Wiring substrates 11 and 12 are positioned on a fixed base 10 in a manner such that there is a step between the wiring substrates, and radiation imaging elements 2 and 3, respectively having scintillators 25 and 35 deposited on photosensitive portions 21 and 31, are respectively mounted on the wiring substrates 11 and 12. The radiation imaging element 2 is positioned so that its setting surface protrudes beyond a radiation incident surface of the radiation imaging element 3, and the photosensitive portion 21 of the radiation imaging element 2 and the photosensitive portion 31 of the radiation imaging element 3 are juxtaposed to a degree to which the portions do not overlap. The photosensitive portion 21 of the radiation imaging element 2 extends close to an edge at the radiation imaging element 3 side and the scintillator 25 of substantially uniform thickness is formed up to this position.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p?-type layer 12c and n+-type semiconductor regions 12d) exposed on a light-incident surface of the semiconductor substrate 12 (p?-type layer 12c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12e is set at the ground potential.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

Abstract: A radiographic imaging apparatus 1 has a solid-state image sensor 11, a scintillator 21, and others. The solid-state image sensor 11 has a photosensitive section 13 and an amplification section 15, which are formed on one side of an Si substrate 12. The photosensitive section 13 includes a plurality of photodiodes 16 as photoelectric converters for photoelectric conversion, and these photodiodes 16 are arrayed in a two-dimensional pattern. The amplification section 15 amplifies outputs from the photodiodes 16 and outputs amplified signals. The scintillator 21 is arranged to cover a region where the photosensitive section 13 and the amplification section 15 are formed on the one side of Si substrate 12, and is formed directly on the region.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p31 -type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 electrically connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so that its edge covers pn junction portions (interfaces between p?-type layer 12c and n+-type semiconductor regions 12d) exposed on a light-incident surface of the semiconductor substrate 12 (p?-type layer 12c), above the pn junction portions, and is of grid shape. The metal wire 14 is grounded and the isolation region 12e is set at the ground potential.

Abstract: N+-type semiconductor regions 12d are formed on a front surface side of a p?-type layer 12c of a semiconductor substrate 12, and these n+-type semiconductor and p?-type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12e is formed on a first insulating layer 13. The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n+-type semiconductor regions 12d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16. The signal readout lines 53 are made of metal such as aluminum, are located above the n+-type semiconductor regions 12d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.

Abstract: An image sensor assembly is mounted and fixed on a mount substrate with an adhesive, and a light sensitive portion of the image sensor assembly is located so as to reach the vicinity of at least one peripheral region. A moisture-proof protective film to cover a scintillator layer of the image sensor assembly is laid so as to cover the scintillator layer over a side wall to which the light sensitive portion is in proximity, up to the back side of a substrate of the image sensor assembly, and this portion on the back side is sandwiched between the image sensor assembly and the mount substrate so as to be fixed.

Abstract: A solid-state imaging device and a frame are secured onto a base plate. The frame has a positioning portion in contact with a side face of a substrate, so as to protect the bonding wire positioned thereunder while positioning and supporting the substrate abutting thereagainst. The frame is made of a metal, and is further provided with a shield member, so as to restrain X-rays from entering a bonding wire and the like. The substrate is set relatively thin, whereby its X-ray transmissivity improves, though substrate bent occurs in this case. Since an elastic body presses the substrate, the bent of the substrate is corrected.

Abstract: An image sensor assembly is mounted and fixed on a mount substrate with an adhesive, and a light sensitive portion of the image sensor assembly is located so as to reach the vicinity of at least one peripheral region. A moisture-proof protective film to cover a scintillator layer of the image sensor assembly is laid so as to cover the scintillator layer over a side wall to which the light sensitive portion is in proximity, up to the back side of a substrate of the image sensor assembly, and this portion on the back side is sandwiched between the image sensor assembly and the mount substrate so as to be fixed.

Abstract: In an X-ray image pickup apparatus comprising first and second semiconductor image sensor chips 14A, 14C arranged adjacent each other on a base plate 20, and a single scintillator panel 40 disposed on the first and second semiconductor image sensor chips, respective planes including surfaces of photosensitive regions of the first and second semiconductor image sensor chips have normals intersecting at a predetermined angle.

Abstract: In an X-ray image pickup apparatus comprising first and second semiconductor image sensor chips 14A, 14C arranged adjacent each other on a base plate 20, and a single scintillator panel 40 disposed on the first and second semiconductor image sensor chips, respective planes including surfaces of photosensitive regions of the first and second semiconductor image sensor chips have normals intersecting at a predetermined angle.

Abstract: A solid-state imaging device and a frame are secured onto a base plate. The frame has a positioning portion in contact with a side face of a substrate, so as to protect the bonding wire positioned thereunder while positioning and supporting the substrate abutting thereagainst. The frame is made of a metal, and is further provided with a shield member, so as to restrain X-rays from entering a bonding wire and the like. The substrate is set relatively thin, whereby its X-ray transmissivity improves, though substrate bent occurs in this case. Since an elastic body presses the substrate, the bent of the substrate is corrected.

Abstract: A solid-state image sensing device 10 mainly includes a light-receiving portion 14 formed on a substrate 12, a vertical shift register 16 formed to face one side of the light-receiving portion 14, and a horizontal shift register 18 and charge amplifiers 20 formed to face the opposite side of the light-receiving portion 14. The light-receiving portion 14 is formed from M×N photodiodes 22, and each photodiode 22 has a gate switch 24. The control terminals of the gate switches 24 are connected to the vertical shift register 16 via gate lines 26 in units of rows. The gate lines 26 have compensation lines 26c so as to make almost equal the capacitances of the gate lines 26 connected in units of rows. Accordingly, a plurality of solid-state image sensing devices 10 can be easily arrayed without any dead zone and can increase the light-receiving area.