Patents by Inventor Harunobu Sakuma
Harunobu Sakuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9587313Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid.Type: GrantFiled: January 26, 2015Date of Patent: March 7, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yuichi Wada, Hiroshi Ashihara, Hideto Tateno, Harunobu Sakuma
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Publication number: 20160013053Abstract: By obtaining a high-quality film by improving the quality of an oxide film formed at a low temperature, manufacturing costs of a large-scale integrated circuit (LSI) may be decreased. A method of manufacturing a semiconductor device includes (a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber; (b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and (c) supplying a microwave to the substrate after processing the substrate with the process gas.Type: ApplicationFiled: September 23, 2015Publication date: January 14, 2016Inventors: Hiroshi ASHIHARA, Shin HIYAMA, Masahisa OKUNO, Yuichi WADA, Harunobu SAKUMA
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Patent number: 9190299Abstract: An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate.Type: GrantFiled: May 21, 2014Date of Patent: November 17, 2015Assignee: Hitachi Kokusai Electric, Inc.Inventors: Yuichi Wada, Harunobu Sakuma, Hiroshi Ashihara, Hideto Tateno
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Publication number: 20150132972Abstract: A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid.Type: ApplicationFiled: January 26, 2015Publication date: May 14, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yuichi WADA, Hiroshi ASHIHARA, Hideto TATENO, Harunobu SAKUMA
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Publication number: 20140302687Abstract: A substrate processing apparatus includes: a reaction chamber configured to process a substrate; a vaporizer including a vaporization container into which a processing liquid including hydrogen peroxide or hydrogen peroxide and water is supplied, a processing liquid supply unit configured to supply the processing liquid to the vaporization container, and a heating unit configured to heat the vaporization container; a gas supply unit configured to supply a processing gas generated by the vaporizer into the reaction chamber; an exhaust unit configured to exhaust an atmosphere in the reaction chamber; and a control unit configured to control the heating unit and the processing liquid supply unit such that the processing liquid supply unit supplies the processing liquid to the vaporization container while the heating unit heats the vaporization container.Type: ApplicationFiled: June 20, 2014Publication date: October 9, 2014Inventors: Hiroshi ASHIHARA, Harunobu SAKUMA, Hideto TATENO, Yuichi WADA
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Publication number: 20140256160Abstract: An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate.Type: ApplicationFiled: May 21, 2014Publication date: September 11, 2014Applicant: Hitachi Kokusai Electric Inc.Inventors: Yuichi Wada, Harunobu Sakuma, Hiroshi Ashihara, Hideto Tateno
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Publication number: 20140235068Abstract: Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film.Type: ApplicationFiled: April 30, 2014Publication date: August 21, 2014Applicant: Hitachi Kokusai Electric Inc.Inventors: Hiroshi ASHIHARA, Tomihiro AMANO, Shin HIYAMA, Harunobu SAKUMA, Yuichi WADA, Hideto TATENO
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Patent number: 8222161Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: GrantFiled: April 18, 2011Date of Patent: July 17, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
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Publication number: 20110192347Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: ApplicationFiled: April 18, 2011Publication date: August 11, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
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Patent number: 7943528Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: GrantFiled: August 25, 2010Date of Patent: May 17, 2011Assignee: Hitachi Kokusai Electric Inc.Inventors: Yoshihiko Yanagisawa, Mitsuro Tanabe, Harunobu Sakuma, Tadashi Takasaki
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Publication number: 20110053382Abstract: Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.Type: ApplicationFiled: August 25, 2010Publication date: March 3, 2011Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yoshihiko YANAGISAWA, Mitsuro TANABE, Harunobu SAKUMA, Tadashi TAKASAKI
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Patent number: 6875280Abstract: A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.Type: GrantFiled: February 9, 2001Date of Patent: April 5, 2005Assignee: Hitachi Kokusai Electric IncInventors: Kazuhito Ikeda, Eisuke Nishitani, Harunobu Sakuma, Kazuhiro Nakagomi
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Publication number: 20030140853Abstract: A substrate processing apparatus includes a reaction chamber, a protection cover, a first heater, a second heater, and a gas supply pipe. The reaction chamber has a wall side and the protection cover covers an inner surface of the wall side. The first heater is interposed between the wall side and the protection cover and serves to heat the protection cover. The second heater is positioned in the reaction chamber and serves to heat a substrate transported in the reaction chamber. The gas supply pipe communicates with the reaction chamber and serves to supply material gas on the substrate.Type: ApplicationFiled: January 21, 2003Publication date: July 31, 2003Applicant: Hitachi Kokusai Electric Inc.Inventors: Tetsuya Wada, Harunobu Sakuma, Toshio Ando, Tsuyoshi Tamaru
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Publication number: 20030037802Abstract: A ruthenium film, an osmium film, and an oxide thereof, deposited or adhered on the inside of a semiconductor treating apparatus are effectively removed. To accomplish this, an oxygen-atom donating gas and a halogen gas are supplied to the apparatus, whereby a reaction product deposited or adhered on the inside of the apparatus can be rapidly and effectively removed. In addition, to providing a stable operation, the formation of a thin film with high qualities and the production of a semiconductor device with a high yield are also realized.Type: ApplicationFiled: July 23, 2002Publication date: February 27, 2003Applicant: Hitachi, Ltd.Inventors: Miwako Nakahara, Toshiyuki Arai, Satoshi Yamamoto, Tsukasa Ohoka, Atsushi Sano, Hideharu Itaya, Harunobu Sakuma
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Publication number: 20010025600Abstract: A substrate processing apparatus comprises a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.Type: ApplicationFiled: February 9, 2001Publication date: October 4, 2001Inventors: Kazuhito Ikeda, Eisuke Nishitani, Harunobu Sakuma, Kazuhiro Nakagomi
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Patent number: 5795452Abstract: A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more magnetic field applying means for generating a magnetic field nearly parallel to a surface of each electrode. The distance between adjacent electrodes is set to the extent that electrons can travel nearly without collision in the space between the adjacent electrodes. Since the distance between adjacent electrodes is narrow, one plasma generated in the neighborhood of one of the adjacent electrode and the other plasma generated in the neighborhood of another electrode can commingle with each other so that the distribution of plasma is made nearly equal, thus a nearly uniform plasma can be formed without a rotating magnetic field.Type: GrantFiled: January 11, 1996Date of Patent: August 18, 1998Assignee: Kokusai Electric Co., Ltd.Inventors: Haruhisa Kinoshita, Osamu Matsumoto, Harunobu Sakuma