Abstract: A film formation apparatus includes a target containing a magnetic material, a support that supports a substrate and locates the substrate in an arrangement region opposing the target, and a magnetic field formation unit located at a side of the arrangement region opposite to the target. The magnetic field formation unit forms a horizontal magnetic field parallel to an oscillation direction, which is one direction extending along the substrate, at a side of the arrangement region where the target is located. The magnetic field formation unit oscillates the horizontal magnetic field in the oscillation direction at least between one end of the arrangement region and another end of the arrangement region in the oscillation direction.

Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.

Abstract: A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.

Abstract: A film formation apparatus includes a target containing a magnetic material, a support that supports a substrate and locates the substrate in an arrangement region opposing the target, and a magnetic field formation unit located at a side of the arrangement region opposite to the target. The magnetic field formation unit forms a horizontal magnetic field parallel to an oscillation direction, which is one direction extending along the substrate, at a side of the arrangement region where the target is located. The magnetic field formation unit oscillates the horizontal magnetic field in the oscillation direction at least between one end of the arrangement region and another end of the arrangement region in the oscillation direction.

Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.

Abstract: A substrate processing apparatus includes a sputter chamber, two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering, and a transport mechanism that transports the substrate along a transport passage located in the sputter chamber. One of the two targets is located at one side of the transport passage opposed to one of the two film formation surfaces of the substrate at a front side with respect to a direction in which the substrate is transported. Another one of the two targets is located at another side of the transport passage opposed to another one of the two film formation surfaces of the substrate at a rear side with respect to the direction in which the substrate is transported.

Abstract: A substrate processing apparatus includes a plasma generation unit that generates a plasma from a process gas in a plasma generation space in which a substrate is placed. The substrate processing apparatus also includes a cooling unit opposed to the substrate with a cooling space located in between. The cooling unit includes a supply port that supplies the process gas to the cooling space. The substrate processing apparatus also includes a process gas supply unit that supplies the process gas to the cooling unit. The substrate processing apparatus further includes a communication portion that communicates the cooling space and the plasma generation space to supply the process gas, which has been supplied to the cooling space, to the plasma generation space.

Abstract: A thin substrate processing device includes a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.

Abstract: Provided is a vacuum treatment device, when a lifting pin inserted to a through hole is moved up, a substrate on a placement table is placed on a lid member which is connected to an upper end of a lifting pin and is separated from a placement surface of the placement table. Additionally, when the lifting pin is moved down, the substrate comes into contact with the placement surface so as to be placed thereon. An annular seal member surrounding a periphery of an opening of the through hole is provided in a portion which faces the lid member in a bottom surface of a depression provided in the placement surface of the placement table. The lid member annularly comes into contact with the seal member when the lifting pin is moved down, and a space inside the through hole and a space outside the through hole are separate by the seal member, thereby preventing gas from flowing into the through hole.