Abstract: A passenger moving space guide system for guiding a large number of passengers who gather in a facility in a certain time and for providing various kinds of necessary information for the passengers. The system includes an information center 19 located in the periphery of the entrance/exit of the facility, where information and guide services related to travel are provided; a security facility 13, located adjacent to the information center 19, for performing security inspections; and a hall 15 arranged along with the security facility. The hall 15 includes convenient service functions for passengers, such as Internet rooms, conference rooms, nursery rooms, medical treatment rooms, restaurants, snack bars and shops, as well as a passenger check-in facility for accepting check-in, an immigration/emigration inspection facility, a passenger boarding guide facility, an air travel agent facility and an airline's passenger reception facility in a comprehensive manner.

Abstract: On a film to be etched by the isotropic etching method to form electrodes, wiring layers or the like, a first mask and a second mask are provided. The first mask is used for forming the electrodes, wiring layers or the like. The second mask is used for forming a checking pattern from the film to determine the progress of etching. The second mask comprises a plurality of straight lines of different widths and at least one mark pattern indicating one of the straight lines. Upon progress of the isotropic etching, parts of the film under the narrowest and narrower straight lines of the second mask are completely etched by side etching phenomenon which proceeds under the mask with parts of the film under wider straight lines being survived. The mark of the film transferred from the mark pattern of the second mask indicates the position under a predetrmined one of the straight lines of the second mask.

Abstract: A process of fabricating a semiconductor device, comprising preparing a semiconductor substrate having a conductor layer formed on a surface thereof, the conductor layer having a step portion over the surface of the semiconductor substrate, forming a layer of polysilicon having a portion overlying the step portion of the conductor layer, and thermally oxidating the polysilicon layer for forming a polysilicon oxide layer having a portion substantially resulting from the portion of the polysilicon layer, the portion of the polysilicon oxide layer being thicker than another portion of the polysilicon oxide layer and becoming thinner away from the step portion of the conductor layer.

Abstract: On a film to be etched by the isotropic etching method to form electrodes, wiring layers or the like, a first mask and a second mask are provided. The first mask is used for forming the electrodes, wiring layers or the like. The second mask is used for forming a checking pattern from the film to determine the progress of etching. The second mask comprises a plurality of straight lines of different widths and at least one mark pattern indicating one of the straight lines. Upon progress of the isotropic etching, parts of the film under the narrowest and narrower straight lines of the second mask are completely etched by side etching phenomenon which proceeds under the mask with parts of the film under wider straight lines being survived. The mark of the film transferred from the mark pattern of the second mask indicates the position under a predetermined one of the straight lines of the second mask.

Abstract: A semiconductor device having a multilayer wiring structure with improved interlayer connections comprises a semiconductor substrate with a first insulating layer provided on a major surface of the substrate; a first extended wiring layer of, for example, polycrystalline silicon, formed on the first insulating layer and preferably having an essentially rectangular cross-sectional shape; a second insulating layer provided on the first insulating layer and on the first wiring layer; a contact hole provided in the second insulating layer to expose a contact region of the first wiring layer and having a width greater than the width of the contact region; a third insulating layer formed in the contact hole in contact with the sidewalls of the contact region and having a thickness which decreases in height smoothly and gradually in a direction away from the respective contact region sidewalls; a second extended wiring layer of, for example, aluminum formed on the second insulating layer, in contact with the third i