Abstract: Disclosed is an abnormality-cause identifying apparatus including: a retrieving unit for retrieving quality data conforming to retrieving conditions; and a computing unit for computing mean values and standard deviations of the retrieved quality data, the computing unit further computing the likelihood of abnormality of each of manufacturing apparatuses, on the basis of the mean values and the standard deviations.

Abstract: Disclosed is an abnormality-cause identifying apparatus including: a retrieving unit for retrieving quality data conforming to retrieving conditions; and a computing unit for computing mean values and standard deviations of the retrieved quality data, the computing unit further computing the likelihood of abnormality of each of manufacturing apparatuses, on the basis of the mean values and the standard deviations.

Abstract: In a test method of an electrostatic breakdown of a semiconductor device in accordance with the present invention, a plurality of semiconductor devices are disposed at random on a member which has been electrostatically charged with a predetermined voltage, and the semiconductor devices are caused to be discharged while being moved on the member. Then, a test is performed to determine whether an electrostatic breakdown occurs in each of semiconductor devices. The electrical characteristics of each semiconductor device are measured after the charged static electricity has been removed. Each semiconductor device to be tested is incorporated in a package and has lead terminals connected to a semiconductor chip.