Abstract: A data protection system includes a data storage apparatus and an information processing apparatus. In the information processing apparatus, a redirection processing apparatus sets a personal storage area corresponding to a user to an accessible state according to a redirection policy. Furthermore, a write control unit controls data writing permission/prohibition for each storage area according to a write management policy. In particular, the write control unit prohibits data writing to a local storage unit except for the storage area to be used to access the personal storage area. With this, the data does not remain in the information processing apparatus, thereby preventing data leakage from the information processing apparatus.

Abstract: A data protection system includes a data storage apparatus and an information processing apparatus. In the information processing apparatus, a redirection processing apparatus sets a personal storage area corresponding to a user to an accessible state according to a redirection policy. Furthermore, a write control unit controls data writing permission/prohibition for each storage area according to a write management policy. In particular, the write control unit prohibits data writing to a local storage unit except for the storage area to be used to access the personal storage area. With this, the data does not remain in the information processing apparatus, thereby preventing data leakage from the information processing apparatus.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using such Levenson masks wherein the Levenson masks have patterns where shielding regions are sandwiched between shifter regions and non-shifter regions respectively. The shifter regions and the non-shifter regions are formed to have predetermined shapes to minimize the effect of optical proximity. Specifically, aperture widths, which are defined as widths of the shifter regions and widths of the non-shifter regions perpendicular to the longitudinal directions of the linear shielding regions, are of a predetermined width for minimizing the effect of optical proximity. The Levenson masks have patterns different from each other and are used for multiple exposures.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The present invention provides Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using these Levenson masks.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: Disclosed are a phase shift mask which has a high size precision and provides a high production yield for semiconductor devices, and a method of fabricating the same. Chrome light shielding films are formed in a predetermined pattern as light shielding films on a glass substrate, and a silicon oxide film (first phase shifter film) which has a planarized surface is formed on the entire surface of the resultant structure in such a way as to bury areas between the chrome light shielding films. A pattern of SOG (Silicon On Glass) films (second phase shifter film) is formed on the silicon oxide film. The SOG films are formed directly above the chrome light shielding films and on areas wider than the chrome light shielding films.

Abstract: An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.

Abstract: An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.

Abstract: A halftone phase shift mask comprises a transparent substrate, a light shielding film formed on the transparent film for shielding exposure light, and having a first opening, and a halftone phase shift film formed in the first opening on the transparent substrate for shifting the phase of the exposure light, and having a second opening which defines an exposed region.

Abstract: A phase-shifting mask includes (a) a substrate, (b) a light-shielding film formed on the substrate and having a plurality of first openings and a plurality of second openings, and (c) a phase-shifter formed on the substrate only in the first opening of the light-shielding film.

Abstract: An anti-reflection structure formed on a gate electrode in a MOSFET device includes a first and second anti-reflection layers sandwiching therebetween a silicon nitride layer. Each of the anti-reflection layers has a two-layer structure including a silicon oxide nitride film and a protective silicon oxide film. The anti-reflection layer structure improves the accuracy of the pattern size for the gate electrode.

Abstract: A Levenson phase shift mask has a phase shifter implemented by thin transparent portions and a non-phase shifter implemented by thick transparent portions, and the thin transparent portions are to be equal in transmittance to and 180 degrees different in phase from the thick transparent portions, wherein a dispersion of light intensity in optical images of the phase shifter and the non-phase shifter obtained by a CCD camera is analyzed to see whether or not the abnormal difference in transmittance and the abnormal phase difference take place, if the abnormal difference in transmittance or the abnormal phase difference takes place, the thin/thick transparent portions are reshaped so as to repair the Levenson phase shift mask.

Abstract: A capacitor is provided, which makes it easy to increase the opposing area size between the lower and upper electrode in spite of miniaturization, and which ensures a desired capacitance value large enough for stable operation of a semiconductor memory device in spite of miniaturization. The capacitor is comprised of a lower electrode formed over an interlayer dielectric layer of a substrate, an upper electrode, and a dielectric located between the lower and upper electrodes. The lower electrode has a first electrode part and a second electrode part connected to each other. The first electrode part includes a plate-shaped bottom subpart and a sidewall subpart extending upward from the periphery of the bottom subpart. The bottom subpart and the sidewall subpart form an inner space.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The present invention provides a method of forming at least a bottom electrode of a capacitor in a semiconductor device. The method comprises the steps forming a first insulation film on a multilayer structure over a semiconductor substrate; forming at least a contact hole which penetrates through the first insulation film and the multilayer structure to reach a surface of the semiconductor substrate; selectively removing the first insulation film to form mask patterns on the multilayer structure; forming a single conductive film which extends within the at least contact hole and over the multilayer structure as well as cover the mask patterns; forming a second insulation film on the single conductive film; partially removing the second insulation film and the single conductive film over the mask patterns so that tops of the mask patterns are shown; and removing remaining parts of the second insulation film and the mask patterns to form at least a bottom electrode comprising a single conductive layer.

Abstract: A method of manufacturing a semiconductor device having capacitor contact holes.

Abstract: An antireflection film includes a base resin and an additive resin, the additive resin having a dry etching rate higher than that of the base resin. A photoresist pattern is formed and the antireflection film is selectively etched using the photoresist pattern as a mask. The molecular weight and weight percent of the additive resin are selected to provide an etching rate for the antireflection film that permits selective removal of the antireflection film while leaving an effective amount of the photoresist.