Abstract: There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.

Abstract: A silicone resin which is represented by the following rational formula (1) and solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k??(1) wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2. The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.

Abstract: There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.

Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A radiation-sensitive resin composition comprising (A) an acid-dissociable group-containing polysiloxane and (B) a photoacid generator containing trifluoromethane sulfonic acid or a compound which generates an acid of the following formula (I), wherein Rf individually represents a fluorine atom or a trifluoromethyl group, and Ra represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1-20 carbon atoms, or a linear or branched fluoroalkyl group having 1-20 carbon atoms, a substituted or unsubstituted monovalent cyclic hydrocarbon group having 3-20 carbon atoms, or a substituted or unsubstituted monovalent cyclic fluoro-hydrocarbon group having 3-20 carbon atoms. The radiation-sensitive resin composition of the present invention exhibits superior resolution, while maintaining high transparency to radiations and high dry etching resistance. The resin composition thus can greatly contribute to the lithography process that will become more and more minute in the future.

Abstract: A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500-100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500–100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.

Abstract: A novel polysiloxane having high transparency to radiations with a wavelength of 193 nm or less, particularly 157 nm or less, and exhibiting superior dry etching resistance and a radiation-sensitive resin composition comprising the polysiloxane exhibiting superior sensitivity, resolution, and the like are provided. The polysiloxane is a resin having the structural unit (I) and/or structural unit (II) of the following formula (1), and having an acid-dissociable group, wherein R1 represents a monovalent aromatic group substituted with a fluorine atom or a fluoroalkyl group or a monovalent aliphatic group substituted with a fluorine atom or a fluoroalkyl group and R2 represents the above a monovalent aromatic group, the above monovalent aliphatic group, a hydrogen atom, a monovalent hydrocarbon group, haloalkyl group, or amino group.

Abstract: There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.

Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A novel photoacid generator containing a structure of the following formula (I), wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z1 and Z2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

Abstract: A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A1 and A2 are an acid-dissociable monovalent organic group, R1 is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R2 is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.

Abstract: A novel polysiloxane having high transparency to radiations with a wavelength of 193 nm or less, particularly 157 nm or less, and exhibiting superior dry etching resistance and a radiation-sensitive resin composition comprising the polysiloxane exhibiting superior sensitivity, resolution, and the like are provided.

Abstract: It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.

Abstract: A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), 1

Abstract: A radiation-sensitive resin composition comprising (A) an acid-dissociable group-containing polysiloxane and (B) a photoacid generator containing trifluoromethane sulfonic acid or a compound which generates an acid of the following formula (I), 1

Abstract: A novel photoacid generator containing a structure of the following formula (I), 1