Abstract: A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

Abstract: A spin valve element is obtained in which, in order to achieve impedance matching of a spin valve element which undergoes high-frequency oscillation, parallel or series magnetic element groups, including a plurality of magnetic elements in which an intermediate layer of an insulating member or a nonmagnetic member is sandwiched by a pair of ferromagnetic layers, are further connected either in series or in parallel, and by using magnetic element groups connected in combination either in parallel or in series, the impedance of the spin valve element can be matched to a desired value, and moreover a porous film can be used to fabricate a spin valve element, so that sophisticated lithography methods need not be used, and a single-domain structure can be realized for individual magnetic elements.

Abstract: A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Abstract: A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel.

Abstract: In order to increase the power which can be passed to a spin valve element, an insulating layer 24 or a nonmagnetic layer 51 is sandwiched by ferromagnetic layers 23, 25, and a porous layer 10(10?) having a plurality of minute holes is placed so as to be in contact with one of the ferromagnetic layers, or near the ferromagnetic layer with another layer intervening. By this means, even when a single-domain magnetic multilayer film extending over a broad region is not used, when, for example, microwave oscillation is induced by means of the spin valve element, the microwave power can be increased.

Abstract: In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

Abstract: A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.

Abstract: Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, IE, IW, and IS are included. In addition, a storage device is manufactured by using such a spin valve element.

Abstract: A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval ton in the conducting state of the ON-OFF modulation is made to satisfy the relation ton<D2/?, where ? is the thermal diffusivity of the heat diffusion portion, and D is the thickness of the heat diffusion portion.

Abstract: A magnetic memory element (10) for use in a cross-point type memory is provided with a spin valve structure having a free layer (5), a nonmagnetic layer (4), and a pinned layer (3). The magnetic memory element is also provided with another nonmagnetic layer (6) on one surface of the free layer (5), and furthermore, a magnetic change layer (7) whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer (6) with the free layer (5). In the magnetic change layer (7), the magnetization intensity increases depending on temperature.

Abstract: A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth1) and is smaller than a second threshold voltage (Vth2) that is larger than Vth1. Each switching device, when a voltage less than or equal to Vth1 is applied, becomes in a first state having the higher resistivity of the two resistivity values, whereas when a voltage more than or equal to Vth2 is applied, becomes in a second state having the lower resistivity of the two resistivity values. The two devices are connected in series in a direction with uniform polarity to each other. The first and second states are selectively generated in the first and second devices by a combination of inputs of the first and second pulses.

Abstract: In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

Abstract: A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts NS, NW, NE, NN. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.

Abstract: The invention includes a two terminal switching device having two stable resistivity values for each applied voltage, which when a voltage of not more than a first threshold voltage (Vth1) is applied, becomes in a first state having a higher resistivity, whereas when a larger second threshold voltage (Vth2) or more is applied, becomes in a second state having a lower resistivity; a resistance connected in series to the switching device; a terminal for applying a bias voltage (Vt) to both ends of a series circuit of the switching device and the resistance; a first pulse inputting terminal; and a second pulse inputting terminal. The invention provides a simple realization of a flip-flop circuit for a sequential logic circuit.

Abstract: A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth1) and is smaller than a second threshold voltage (Vth2) that is larger than Vth1. Each switching device, when a voltage less than or equal to Vth1 is applied, becomes in a first state having the higher resistivity of the two resistivity values, whereas when a voltage more than or equal to Vth2 is applied, becomes in a second state having the lower resistivity of the two resistivity values. The two devices are connected in series in a direction with uniform polarity to each other. The first and second states are selectively generated in the first and second devices by a combination of inputs of the first and second pulses.

Abstract: Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions IN, IE, IW, and IS are included. In addition, a storage device is manufactured by using such a spin valve element.

Abstract: A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.

Abstract: A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element (1) having characteristics which maintain states, a first switching element (25) one end of which is connected to one terminal of the two-terminal bistable switching element (1), a second switching element (29) one end of which is connected to the other terminal of the two-terminal bistable switching element (1) via a resistance element (27), and first and second pulse input terminals (33, 37) respectively connected to the one terminal and the other terminal of the two-terminal bistable switching element (1). A bias voltage is applied across the other end of the first switching element (25) and the other end of the second switching element (27), and a trigger pulse is input from the first and second pulse input terminals (33, 37).

Abstract: A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.

Abstract: A spin valve element including an insulating layer or a nonmagnetic layer sandwiched by first and second ferromagnetic layers, and a porous layer having a plurality of minute holes placed in contact with one of the ferromagnetic layers, or near one of the ferromagnetic layer with another intervening layer therebetween. The first ferromagnetic layer is electrically connectable through the minute holes of the porous layer, and the second ferromagnetic layer is also electrically connectable.