Patents by Inventor Haruo Matsumaru
Haruo Matsumaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6226059Abstract: An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al—Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.Type: GrantFiled: June 17, 1998Date of Patent: May 1, 2001Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Tetsuaki Suzuki, Mitsuo Nakatani, Michio Tsukii, Akira Sasano, Saburo Oikawa, Ryoji Oritsuki
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Patent number: 5889573Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.Type: GrantFiled: September 12, 1997Date of Patent: March 30, 1999Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Yasuo Tanaka, Ken Tsutsui, Toshihisa Tsukada, Kazuo Shirahashi, Akira Sasano, Yuka Matsukawa
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Patent number: 5781255Abstract: An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.Type: GrantFiled: October 4, 1996Date of Patent: July 14, 1998Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Tetsuaki Suzuki, Mitsuo Nakatani, Michio Tsukii, Akira Sasano, Saburo Oikawa, Ryoji Oritsuki
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Patent number: 5719408Abstract: In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.Type: GrantFiled: February 21, 1997Date of Patent: February 17, 1998Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Yasuo Tanaka, Ken Tsutsui, Toshihisa Tsukada, Kazuo Shirahashi, Akira Sasano, Yuka Matsukawa
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Patent number: 5672523Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.Type: GrantFiled: May 26, 1995Date of Patent: September 30, 1997Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Yasuo Tanaka, Ken Tsutsui, Toshihisa Tsukada, Kazuo Shirahashi, Akira Sasano, Yuka Matsukawa
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Patent number: 5671027Abstract: An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.Type: GrantFiled: August 1, 1995Date of Patent: September 23, 1997Assignee: Hitachi, Ltd.Inventors: Akira Sasano, Kazuo Shirahashi, Yuka Matsukawa, Hideaki Taniguchi, Hideaki Yamamoto, Haruo Matsumaru
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Patent number: 5610738Abstract: An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively.Type: GrantFiled: March 27, 1995Date of Patent: March 11, 1997Assignee: Hitachi, Ltd.Inventors: Akira Sasano, Kazuo Shirahashi, Yuka Matsukawa, Hideaki Taniguchi, Hideaki Yamamoto, Haruo Matsumaru
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Patent number: 5600460Abstract: A method of manufacturing a liquid crystal display substrate, comprising the step of checking the disconnection of a wiring layer formed on a liquid crystal side face of at least one of the transparent substrates which are arranged to confront each other through a liquid crystal. There is added the step of repairing the disconnection by attaching a conductive material to the disconnected portion of the wiring layer. Thus, the disconnection can be repaired remarkably easily and reliably.Type: GrantFiled: November 8, 1994Date of Patent: February 4, 1997Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Mitsuo Nakatani, Haruo Matsumaru, Susumu Niwa
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Patent number: 5589962Abstract: An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.Type: GrantFiled: June 6, 1995Date of Patent: December 31, 1996Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Tetsuaki Suzuki, Mitsuo Nakatani, Michio Tsukii, Akira Sasano, Saburo Oikawa, Ryoji Oritsuki
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Patent number: 5585290Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.Type: GrantFiled: November 29, 1993Date of Patent: December 17, 1996Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Yasuo Tanaka, Ken Tsutsui, Toshihisa Tsukada, Kazuo Shirahashi, Akira Sasano, Yuka Matsukawa
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Patent number: 5530568Abstract: A liquid crystal display device comprises: a liquid crystal display panel including a liquid crystal interposed between first and second transparent plates; a set of conductive lines disposed on a surface of at least one of said transparent plates; and a set of electrically conductive pads connected to respective first ends of the conductive lines. Each of the conductive lines has a lower layer made of aluminum or aluminum alloy and an upper layer made of a transparent conductive film. The aluminum or aluminum alloy layers in the conductive lines do not extend into any of the layers used to construct the pads. Each pad, instead, is formed of only a transparent conductive film. Additionally, the conductive lines have respective second ends which are commonly connected to a short-circuiting line. Disposed within the line is another electrically conductive pad, constructed in the fashion the pads in the aforementioned set are constructed.Type: GrantFiled: November 25, 1994Date of Patent: June 25, 1996Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Kazuo Shirahashi, Haruo Matsumaru, Michio Tsukii
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Patent number: 5402254Abstract: An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.Type: GrantFiled: November 24, 1993Date of Patent: March 28, 1995Assignee: Hitachi, Ltd.Inventors: Akira Sasano, Kazuo Shirahashi, Yuka Matsukawa, Hideaki Taniguchi, Hideaki Yamamoto, Haruo Matsumaru
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Patent number: 5359206Abstract: Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern.Type: GrantFiled: April 15, 1991Date of Patent: October 25, 1994Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Haruo Matsumaru, Yasuo Tanaka, Ken Tsutsui, Toshihisa Tsukada, Kazuo Shirahashi, Akira Sasano, Yuka Matsukawa
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Patent number: 5285301Abstract: An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxide film of the aluminum film. Dummy gate lines DGL are disposed outside the outermost scanning signal line GL, and dummy data lines DDL are disposed outside the outermost video signal line DL so as to prevent breakage of outermost signal lines.Type: GrantFiled: March 16, 1992Date of Patent: February 8, 1994Assignee: Hitachi, Ltd.Inventors: Kazuo Shirahashi, Yuka Matsukawa, Akira Sasano, Hideaki Taniguchi, Hideaki Yamamoto, Haruo Matsumaru
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Patent number: 5200634Abstract: A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.Type: GrantFiled: December 9, 1991Date of Patent: April 6, 1993Assignee: Hitachi, Ltd.Inventors: Toshihisa Tsukada, Yoshiyuki Kaneko, Hideaki Yamamoto, Norio Koike, Ken Tsutsui, Haruo Matsumaru, Yasuo Tanaka
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Patent number: 5177577Abstract: An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode of an upper aluminum film and a lower tantalum film formed over a glass substrate and a gate insulator of an upper silicon nitride film and a lower anodized oxide film of the aluminum film.Type: GrantFiled: July 5, 1991Date of Patent: January 5, 1993Assignee: Hitachi, Ltd.Inventors: Hideaki Taniguchi, Kazuo Shirahashi, Yuka Matsukawa, Haruo Matsumaru, Akira Sasano
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Patent number: 5032531Abstract: In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.Type: GrantFiled: July 7, 1989Date of Patent: July 16, 1991Assignee: Hitachi, Ltd.Inventors: Ken Tsutsui, Toshihisa Tsukada, Hideaki Yamamoto, Yasuo Tanaka, Haruo Matsumaru
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Patent number: 4990981Abstract: A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.Type: GrantFiled: January 13, 1989Date of Patent: February 5, 1991Assignee: Hitachi, Ltd.Inventors: Yasuo Tanaka, Haruo Matsumaru, Hideaki Yamamoto, Toshihisa Tsukada, Ken Tsutsui, Yoshiyuki Kaneko
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Patent number: 4855795Abstract: A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.Type: GrantFiled: August 21, 1986Date of Patent: August 8, 1989Assignee: Hitachi, Ltd.Inventors: Hideaki Yamamoto, Akira Sasano, Haruo Matsumaru, Yasuo Tanaka, Toshihisa Tsukada
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Patent number: 4407010Abstract: A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.Type: GrantFiled: August 6, 1981Date of Patent: September 27, 1983Assignee: Hitachi, Ltd.Inventors: Toru Baji, Toshihisa Tsukada, Norio Koike, Toshiyuki Akiyama, Iwao Takemoto, Shigeru Shimada, Chushirou Kusano, Shinya Ohba, Haruo Matsumaru