Abstract: A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin<Vp<Vmax.

Abstract: A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin<Vp<Vmax.

Abstract: A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer.

Abstract: A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.

Abstract: In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily changed to a negative hydrogen ion, and the ion is introduced onto a wafer arranged in a vacuum container. In this manner, cleaning is done by assisting a negative hydrogen ion having its less generated secondary electrons without imparting plasma damage to an element.

Abstract: A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.