Abstract: A surface mounting structure for a surface mounting electronic component has an electronic component, a land, a wiring, and an electrical connection pattern. The electronic component has electrodes at opposite ends thereof. The land is connected to each electrode through a solder. The wiring is connected to the land and has a width which is smaller than a width of the electronic component in a width direction thereof. The wiring is connected to the electrical connection pattern. The electrical connection pattern has on a side on which the wiring is connected to the electrical connection pattern a width which is larger than the width of the electronic component in the width direction thereof.

Abstract: A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.

Abstract: A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.

Abstract: A surface mounting structure for a surface mounting electronic component comprises an electronic component a land, a wiring, and an electrical connection pattern. The electronic component has electrodes at opposite ends thereof. The land is connected to each electrode through a solder. The wiring is connected to the land and has a width which is smaller than a width of the electronic component in a width direction thereof. The wiring is connected to the electrical connection pattern. The electrical connection pattern has on a side on which the wiring is connected to the electrical connection pattern a width which is larger than the width of the electronic component in the width direction thereof.

Abstract: A screw-driving device, which can drive screws continuously one by one, comprises a casing coupled to a screwdriver, a slide member slidably moved in reciprocating movement in the casing and a mechanism for feeding a screw-holding tape by one-step pitches corresponding to the distances between the adjacent screws on the tape. The tape feeding mechanism includes a guide slot provided in the casing, and a two-arm lever pivotally connected to the slide member and pivotally moved to perform indexing of the screws to a position aligned with the screwdriver by a pin fitted into the inclined section of the guide slot. A pawl member with a pawl fitted into one of the grooves at one lateral edge of the tape is pivotally connected to the end of the other arm of the two-arm lever and is biased toward the tape by a spring. At the same time, a further pawl member entering one of the grooves at the opposite side of the tape is pivotally connected to the slide member and is biased toward the tape.

Abstract: A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.

Abstract: A static induction transistor has a gate region formed with a protrusion extending toward a drain region. The protrusion is located toward one side of the gate region such that a shallower gate region lies between the protrusion and the nearest source region. When a reverse voltage higher than the withstand voltage is applied between the gate and drain, avalanche breakdown occurs only in a region immediately below the protrusion, and no hot carriers are allowed to flow into a source region. Deterioration of the voltage-withstanding property and destruction of the device is thereby prevented. Another embodiment has a semiconductor region of a first conductivity type formed in a peripheral portion of a semiconductor layer of the first conductivity type in which a plurality of gate regions are disposed and adjacent a first major surface thereof.

Abstract: In a screw positioning device, a slide element (5) is slidably fitted, through a return spring (10), in a slide guide case (3) which is mounted to a forward end of a screw driver tool (1), and a pin (13) is provided on the slide element (5) and is movable within an elongated bore (11) formed in the slide guide case (3) in a longitudinal direction, during the sliding movement of the slide element (5).A transfer mechanism is provided which transfers a screw holding belt (15) by a single screw section when the slide element (5) is pushed into the slide guide case (3) part of the way. A holding mechanism is also provided which restricts return of the pin (13) to restrict return of the slide element (5).

Abstract: A transistor provided with a current detecting function does not need any external resistance to detect current but uses a part of the electrode wiring through which main current flows as a resistance to prevent power loss. It detects the magnitude of main current on the basis of voltage drop caused by the resistance. Further, a stable sense voltage can be obtained without being affected by temperature change and sense voltages caused at the both ends of a sense resistance can be maintained constant with temperature change. Sense voltages can accurately correspond to the magnitude of main current flowing through a main transistor to enable excess current to be detected accurately.

Abstract: A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.

Abstract: An electronic cash register comprising: a power source for energization of said electronic cash register, a power recovery detecting circuit operatively coupled to said power source for detecting the power recovery after occurrence of the power failure, a keyboard for entering numerals and various functions, first price and department code registers for storing the entered price and department code of commodities, respectively, a counter for counting the number of digits of the department code, an adder responsive to the count up output of the counter for providing a cumulative total amount of the prices of the commodities, a total amount non-volatile register for storing the cumulative total amount, a second price and department code non-volatile registers responsive to the count up output of the counter for receiving and storing the price and department code information stored in the first price and department registers respectively, and a printing means responsive to the total, the second price and the sec