Abstract: The semiconductor device has a conductive substrate formed from a conductive material, a nonconductive layer provided on at least part of the surface of the conductive substrate, plural semiconductor elements provided on this nonconductive layer, wiring that electrically connects the plural semiconductor elements, and at least one electrical connection part between the nonconductive layer and semiconductor elements or wiring. The semiconductor element for which the potential difference with the conductive substrate is the greatest is disposed in a position other than the geometric terminal of the arrangement created by the plural semiconductor elements.

Abstract: The solar cell module and the solar cell device have excellent insulation properties, reduced fluctuation of leakage current and high withstand voltage. The solar cell module includes a metal substrate having a metal base and an insulation layer formed on at least one side of the metal base, and a semiconductor circuit provided on the metal substrate. The metal base is connected to a predetermined part of an electric path having a first potential between a minimum potential and a maximum potential of the semiconductor circuit, and a potential of the metal base is maintained at the first potential of the part of the electric path of the semiconductor circuit during the operation of the semiconductor circuit.

Abstract: A solar cell module includes a metal substrate, an insulation layer, series-connected solar cells, two output terminals, and a ground terminal. Each solar cell includes an underside electrode layer, a photoelectric conversion layer and a transparent electrode layer. The solar cell module further includes an electrical conductive layer for electrically connecting the metal substrate to the underside electrode of one grounding solar cell located in a range of plus 10% to minus 10% of the number of the solar cells from a solar cell located at a center of the line of the solar cells. The ground terminal is connected through the metal substrate and the conductive layer to the grounding solar cell.

Abstract: A solar cell, comprising: a metal substrate having an insulating anodic oxidation film; and a photoelectric conversion layer provided on the metal substrate, whereon the anodic oxidation film has a surface roughness of 0.5 nm to 2 ?m and the photoelectric conversion layer comprises a chalcopyrite semiconductor material having a band gap of 1.3 eV to 1.5 eV.

Abstract: A substrate of the invention has a positioning marker formed with a light absorbing agent that selectively absorbs light of a specific wavelength region or with a light reflecting agent that selectively reflects light of a specific wavelength region. Preferably, the light of a specific wavelength range is near infrared light, infrared light, near ultraviolet light, or ultraviolet light. Preferably, the positioning marker is formed on a rear surface of the substrate.

Abstract: A substrate for a solar cell, containing a metal substrate and an insulating anodic oxidation film provided on the metal substrate, wherein the thickness TO of the anodic oxidation film and the thickness TB of a barrier layer of the anodic oxidation film are inside a region I surrounded by the point A (TO=0.01 ?m, TB=0.01 ?m), the point B (TO=2 ?m, TB=2 ?m), the point C (TO=100 ?m, TB=2 ?m) and the point D (TO=100 ?M, TB=0.01 ?m) shown in FIG. 1 (provided that the region includes its boundary lines); and a solar cell using the same.

Abstract: A substrate for a solar cell, containing a metal substrate and an anodic oxidation film provided on the metal substrate, wherein on a surface of the anodic oxidation film, pores in a diameter of 10 nm to 600 nm are formed; and a solar cell using the same.

Abstract: A substrate for a solar cell having a metal substrate, a first insulating oxide film formed on the metal substrate by anodic oxidation, and a second insulating film, wherein the first insulating oxide film has pores and the pores are sealed with the second insulating film at a sealing ratio of 5 to 80%.

Abstract: The invention implements inter-terminal transmission with guaranteed capacity based on the single-path configuration function of networks composed of switching hubs with an MAC address learning function and centralized management of transmission capacity, without control over hubs. The capacity to be used by transmission links on a network is stored in advance and transmission capacity along the path to be used is allocated based on requests from terminals, with the allocation removed using a Terminate Request. At such time, by using transmission links and switching hubs with an MAC address learning function, transmission is limited to single-path transmission.

Abstract: It is provided switching means for connecting and disconnecting a link between nodes, so that when a network has a redundant link which forms a loop among nodes—this loop preventing normal connection relationship being maintained—the connection relationship can be made normal by controlling this switching means. Controlling the switching means also achieves rapid recovery from a fault which has occurred in a link between nodes, by utilizing the aforementioned loop to form a route that bypasses the fault.