Abstract: There are provided a substrate processing apparatus and a reaction tube for processing a substrate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and process the substrate, a heater configured to heat the substrate, a gas supply part configured to supply a gas to an inside of the process chamber, a quartz reaction tube installed in the alloy reaction tube and a purge gas supply part configured to supply a purge gas to a gap formed between the alloy reaction tube and the quartz reaction tube. The process chamber comprises an alloy reaction tube made of a material comprising at least molybdenum (Mo) and cobalt (Co) and excluding aluminum (Al).

Abstract: There are provided a substrate processing apparatus and a reaction tube for processing a substrate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and process the substrate, a heater configured to heat the substrate, and a gas supply part configured to supply a gas to an inside of the process chamber. The process chamber comprises an alloy reaction tube made of a material comprising at least molybdenum (Mo) and cobalt (Co) but not comprising aluminum (Al).

Abstract: A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

Abstract: A chemical vapor deposition apparatus has a reactor divided into a reaction space and a purging space by a susceptor for supporting a wafer and a loading chamber communicated through a gate with the reactor. Exhaust units are communicated with the reactor and loading chamber, respectively, so that the pressures in the reactor and loading chamber may be reduced. The susceptor has a plurality of recesses to aid placing or scooping the water. Through a transparent wall on the side of the purging space, the susceptor is heated by a lamp unit disposed outside the transparent wall. The loading chamber includes a wafer transport mechanism for charging a wafer into the reactor or discharging a processed wafer from the reactor. An unprocessed wafer is loaded to the loading chamber from a cassette and the processed wafer is unloaded to the cassette. One or a small number of wafers are processed at one time. A uniform film is deposited with a high reproducibility.