Abstract: A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil

Abstract: A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil

Abstract: An electroluminescent display device with decreased voltage requirements comprises a substrate having a major surface, a first electrode over the major surface, a light-emitting film over the first electrode, and a second electrode over the light-emitting film. At least one insulating film is disposed in contact with a major surface of the light-emitting film, which insulating film has a columnar crystal structure oriented parallel to an electric field formed between the two electrodes.

Abstract: A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas.

Abstract: An electroluminescent display device with decreased voltage requirements comprises:(a) a substrate having a major surface;(b) a first electrode disposed over the major surface of the substrate;(c) a first insulating film disposed over the first electrode;(d) a light-emitting film disposed over the first insulating film;(e) a second insulating film disposed over the light-emitting film; and(f) a second electrode disposed over the second insulating film. The insulating films have a columnar structure oriented perpendicular to an electric field formed between the two electrodes, and either of the insulating films may be omitted.

Abstract: A method for manufacturing a thin-film EL device utilizes a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4 wt % when the target surface is sulfurized during sputtering and less than 0.1 wt % when the target surface is not sulfurized.

Abstract: A light-emitting layer is prepared by using sputtering gas containing H.sub.2 S gas at a concentration greater than 20% by volume, and by sputtering a target under the optimal electric discharge power corresponding to the concentration of H.sub.2 S gas. A light-emitting layer having good light-emitting characteristics is obtained under a high film-forming rate.

Abstract: A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas.

Abstract: The present invention reduces weak points in the insulation films of electro-luminescence (EL) panels by constructing, at least the lower part of the insulating film, as a coated film comprising an insulator in film form created by coating a fluidic material in an EL indicating panel which includes a light emitting film disposed between a lower electrode film and an upper electrode film, and insulation films disposed in a way that will make contact with the light emitting film; and further by forming the contours of the light emitting film parts larger than the area in which the lower and upper electrode films intersect with each other in an EL indicating panel in which the light emitting film is divided into many light emitting film parts.

Abstract: During manufacture of electroluminescent elements, layers of material are deposited upon a substrate as it is moving in a vacuum chamber beneath masks that shield the terminal regions of transparent electrodes formed upon the substrate. The masks are arranged so as to not contact the substrate, and are placed between the layer-forming material source. First insulation films, the light-emitting layers, or the second insulation films, or combinations thereof may be deposited using the method.

Abstract: An infrared analyzer where infrared radiation is passed through a measurement cell containing a material that includes a component that absorbs infrared radiation. The radiation exiting the measurement cell passes into a first detector, through an optical filter to a second infrared radiation detector. By analyzing the outputs from each detector and by knowing the characteristics of the optical filter, the concentration of certain infrared absorbing components in the material can be determined.

Abstract: In the infrared gas analyzers described in the specification, infrared radiation is transmitted through a measuring cell to an infrared detector. The measuring cell has an external case and a tubular filter to remove particulate material from the gas being analyzed immediately before it is intercepted by the infrared radiation.

Abstract: An oxygen sensor in which a porous thick membrane (20) of transition-metal oxide and electrode metal thick membranes (14, 16) are provided on a ceramic base and these membranes are coated with a ceramic protective layer. The oxygen sensor in which the transition-metal oxide and the electrode metal are constructed in the forms of thick membranes and the protective layer is formed by plasma spray coating is mechanically tough and permits the gas to diffuse rapidly into the porous structure with rapid variation in the electric resistance depending on an oxygen partial pressure in the gas. Accordingly, the oxygen sensor may be conveniently used for detecting an oxygen content in the waste gas from automobiles.

Abstract: Into a metal tube (24) provided with vent-holes (32) is inserted an oxygen sensor element (10) which comprises a ceramic round rod coated with a porous thick membrane of transition-metal oxide, divided electrode thick membranes (14) and a protective layer therefor, thereby to obtain an oxygen sensor. One electrode of the oxygen sensor element is connected to the metal tube and the opposite electrode is connected to a connecting lead wire (64, 66) electrically insulated from the tube, so that the oxygen sensor is rich in toughness against the mechanical oscillation and impact. The sensor may suitably be used to detect the oxygen content in the waste gas of automobiles.