Patents by Inventor Harutora Shono

Harutora Shono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate semiconductor device and driving circuit device and electronic system both using the same
    Patent number: 5642252
    Abstract: An improvement in conditions that protective functions of an insulated gate semiconductor device with a protection circuit incorporated therein are performed, an improvement in the cutoff of heating, the prevention of malfunctions and an improvement in ease of usage can be achieved.The insulated gate semiconductor device of the present invention comprises a power insulated gate semiconductor element (M9), at least one MOSFET (M1 through M7) for a protection circuit, for controlling the power insulated gate semiconductor element, a constant-voltage circuit using forward voltages developed across diodes (D2a through D2f) for the constant-voltage circuit, and voltage restricting diodes (D1 and D0a through D0d) for controlling the upper limit of a power supply voltage of the constant-voltage circuit. Power to be supplied to the voltage restricting diodes is supplied from an external gate terminal of the power insulated gate semiconductor element.
    Type: Grant
    Filed: August 15, 1994
    Date of Patent: June 24, 1997
    Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp.
    Inventors: Kozo Sakamoto, Isao Yoshida, Shigeo Otaka, Tetsuo Iijima, Harutora Shono, Ken Uchid, Masayoshi Kobayashi, Hideki Tsunoda