Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

Abstract: Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas, wherein the support unit includes an electrostatic chuck including an upper body having a support surface that suctions the substrate and a lower body extending from the upper body to a lower side, wherein the lower body has an extension part extending laterally from the upper body, a focus ring disposed on the extension part of the electrostatic chuck, and a metallic ring provided between the upper body of the electrostatic chuck and the focus ring and configured to control plasma in an extreme edge of the substrate.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a process chamber having a treatment space in the interior thereof, a support unit configured to support a substrate in the treatment space, a gas supply unit configured to supply a treatment gas into the treatment space, and a plasma generating unit configured to generate plasma from the gas in the treatment space, wherein the plasma generating unit includes a high-frequency power source, a high-frequency antenna, to which a current is applied from the high-frequency power source, and an additional antenna provided to be spaced apart from the high-frequency antenna and to which a coupling current is applied from the high-frequency antenna.

Abstract: Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.

Abstract: An antenna and a substrate treating process utilizing the same are provided. The antenna may extend along an imaginary baseline having predetermined curvature and comprise a section where the distance between the baseline and intersection point between the antenna and a vertical line perpendicular to the baseline changes depending on a position on the baseline.

Abstract: Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna.