Patents by Inventor Haruyoshi Takaoka

Haruyoshi Takaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4288804
    Abstract: A complementary metal-oxide semiconductor comprises at least one P channel MOSFET and at least one N channel MOSFET. In the semiconductor at least one additional doped portion is formed close to at least one of the P and N channel MOSFETs at a small part of the region which is driven by the voltage supply. The additional doped portion is directly connected to the voltage supply.
    Type: Grant
    Filed: December 10, 1979
    Date of Patent: September 8, 1981
    Assignee: Fujitsu Limited
    Inventors: Hideo Kikuchi, Haruyoshi Takaoka, Shigenori Baba