Patents by Inventor Haruyuki BABA
Haruyuki BABA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955562Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M.Type: GrantFiled: August 17, 2022Date of Patent: April 9, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Haruyuki Baba, Naoki Okuno, Yoshihiro Komatsu, Toshikazu Ohno
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Publication number: 20230378371Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.Type: ApplicationFiled: August 3, 2023Publication date: November 23, 2023Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Kenichi OKAZAKI, Yukinori SHIMA, Shinpei MATSUDA, Haruyuki BABA, Ryunosuke HONDA
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Publication number: 20230329002Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.Type: ApplicationFiled: August 24, 2021Publication date: October 12, 2023Inventors: Shunpei YAMAZAKI, Yasuhiro JINBO, Hitoshi KUNITAKE, Haruyuki BABA, Yuki ITO, Fumito ISAKA, Kazuki TANEMURA, Yasumasa YAMANE, Tatsuya ONUKI
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Publication number: 20230326955Abstract: A semiconductor device with a small variation in characteristics is provided. In a manufacturing method of a semiconductor device including a capacitor with reduced leak current, a first conductor is formed; a second insulator is formed over the first conductor; a third insulator is formed over the second insulator; a second conductor is formed over the third insulator; a fourth insulator is deposited over the second conductor and the third insulator; by heat treatment, hydrogen contained in the third insulator diffuses into or is absorbed by the second insulator; the first conductor is one electrode of the capacitor; the second conductor is the other electrode of the capacitor; and each of the second insulator and the third insulator is a dielectric of the capacitor.Type: ApplicationFiled: August 12, 2021Publication date: October 12, 2023Inventors: Shunpei YAMAZAKI, Sachiaki TEZUKA, Haruyuki BABA, Yuji EGI, Yasuhiro JINBO, Yujiro SAKURADA, Takeshi AOKI
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Patent number: 11735403Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.Type: GrantFiled: July 26, 2021Date of Patent: August 22, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Haruyuki Baba
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Publication number: 20230259681Abstract: A program for executing a simulation of a circuit including an anti-ferroelectric element is provided. An equivalent circuit model of an anti-ferroelectric element is set in the program. The equivalent circuit model includes, between a first terminal and a second terminal, a ferroelectric element, a linear resistor, a first transistor, and a second transistor.Type: ApplicationFiled: September 9, 2021Publication date: August 17, 2023Inventors: Hitoshi KUNITAKE, Haruyuki BABA
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Patent number: 11721769Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.Type: GrantFiled: May 13, 2022Date of Patent: August 8, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Yukinori Shima, Shinpei Matsuda, Haruyuki Baba, Ryunosuke Honda
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Publication number: 20230246034Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.Type: ApplicationFiled: April 13, 2023Publication date: August 3, 2023Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Haruyuki BABA
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Patent number: 11658185Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.Type: GrantFiled: March 11, 2021Date of Patent: May 23, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Motoki Nakashima, Haruyuki Baba
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Publication number: 20230073146Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M.Type: ApplicationFiled: August 17, 2022Publication date: March 9, 2023Inventors: Shunpei YAMAZAKI, Haruyuki BABA, Naoki OKUNO, Yoshihiro KOMATSU, Toshikazu OHNO
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INORGANIC LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR DEVICE INCLUDING INORGANIC LIGHT-EMITTING ELEMENT
Publication number: 20220416124Abstract: A semiconductor device including an inorganic light-emitting element is provided. The semiconductor device includes the inorganic light-emitting element, a transistor, and a capacitor. The inorganic light-emitting element includes a first film and a second film. The first film contains indium, oxygen, and nitrogen, and the second film contains gallium and nitrogen. The first film has a wurtzite structure or a cubic crystal structure, and the second film has a wurtzite structure and grows on the first film. The first film functions as a cathode electrode of the inorganic light-emitting element. One electrode of the capacitor is formed above the second film included in the inorganic light-emitting element, and the transistor including a metal oxide in a semiconductor layer is formed above the other electrode of the capacitor. The one electrode of the capacitor has a function of reflecting light emitted from the inorganic light-emitting element.Type: ApplicationFiled: December 7, 2020Publication date: December 29, 2022Inventors: Kazuki TANEMURA, Haruyuki BABA, Takahiro FUKUTOME -
Patent number: 11489076Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.Type: GrantFiled: July 1, 2020Date of Patent: November 1, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Yukinori Shima, Shinpei Matsuda, Haruyuki Baba, Ryunosuke Honda
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Publication number: 20220302312Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor, a second conductor, a third oxide, a fourth oxide, and a second insulator over the second oxide; a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide; a fourth insulator over the second insulator; and a third conductor over the fourth insulator. The second insulator is positioned between the first conductor and the second conductor. The third oxide is positioned between the first conductor and the second insulator. The fourth oxide is positioned between the second conductor and the second insulator. The thickness of the third oxide between the first conductor and the second insulator is greater than or equal to 3 nm and less than or equal to 8 nm.Type: ApplicationFiled: September 7, 2020Publication date: September 22, 2022Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hitoshi Kunitake, Yuichi YANAGISAWA, Shota MIZUKAMI, Kazuki TSUDA, Haruyuki BABA, Shunpei YAMAZAKI
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Publication number: 20220285555Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.Type: ApplicationFiled: May 13, 2022Publication date: September 8, 2022Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Kenichi OKAZAKI, Yukinori SHIMA, Shinpei MATSUDA, Haruyuki BABA, Ryunosuke HONDA
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Patent number: 11424369Abstract: A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M.Type: GrantFiled: June 25, 2019Date of Patent: August 23, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Haruyuki Baba, Naoki Okuno, Yoshihiro Komatsu, Toshikazu Ohno
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Publication number: 20220254932Abstract: A semiconductor device for high power consumption is provided. The semiconductor device includes a substrate, a first conductor over the substrate, a first metal oxide over the first conductor, a first oxide over the first metal oxide, a second oxide over the first oxide, a first insulator over the second oxide, a second conductor over the first insulator, a second insulator over the second conductor, a third insulator in contact with a side surface of the second conductor, a side surface of the first insulator, and a side surface of the second insulator, a second metal oxide over the second oxide, the second insulator, and the third insulator, and a third conductor over the second metal oxide. The second conductor includes a region overlapping with the second oxide. The third conductor includes a region in contact with the second metal oxide. The second metal oxide includes a region in contact with the second oxide.Type: ApplicationFiled: June 5, 2020Publication date: August 11, 2022Inventors: Akio SUZUKI, Haruyuki BABA
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Publication number: 20220231131Abstract: A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.Type: ApplicationFiled: May 11, 2020Publication date: July 21, 2022Inventors: Takayuki IKEDA, Hitoshi KUNITAKE, Hajime KIMURA, Haruyuki BABA
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Patent number: 11342462Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.Type: GrantFiled: July 1, 2020Date of Patent: May 24, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Yukinori Shima, Shinpei Matsuda, Haruyuki Baba, Ryunosuke Honda
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Patent number: 11264511Abstract: A semiconductor device with high on-state current is provided. The semiconductor device includes a transistor. The transistor includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide; a first conductor and a second conductor over the second oxide; a second insulator; a third conductor; a fourth insulator over the first conductor and the second conductor; and a third insulator over the fourth insulator. An opening reaching the second oxide is provided in the third insulator and the fourth insulator. The third oxide is positioned to cover an inner wall of the opening. The second insulator is positioned to cover the inner wall of the opening with the third oxide therebetween. The third conductor is positioned to fill the opening with the third oxide and the second insulator therebetween.Type: GrantFiled: February 19, 2019Date of Patent: March 1, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Haruyuki Baba, Shiori Murayama
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Publication number: 20210358729Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.Type: ApplicationFiled: July 26, 2021Publication date: November 18, 2021Inventors: Shunpei YAMAZAKI, Motoki NAKASHIMA, Haruyuki BABA