Abstract: An electron beam writing apparatus according to the present invention includes a potential regulating member arranged to be upstream of a target object in the case where the target object is placed on a stage, and configured to be set to have a fixed potential being positive with respect to the target object, a potential applying circuit configured to apply a voltage to the target object or the potential regulating member so that the potential regulating member has the fixed potential, and a correction circuit configured to correct a positional deviation of the electron beam on a surface of the target object which occurs in the case where the target object is irradiated with the electron beam in the state in which the potential regulating member has the fixed potential.

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

Abstract: An organic electroluminescent panel has excellent reliability of luminance of emitted light, and an organic electroluminescent display device includes such an organic electroluminescent panel. The organic electroluminescent panel includes a structure in which the first electrode, an organic layer including at least a light-emitting layer, the second electrode are stacked in this order on a substrate having a surface on which an organic insulating film is formed, wherein the organic electroluminescent panel further includes an inorganic insulating film, the inorganic insulating film covers the organic insulating film and the first electrode, the inorganic insulating film has an opening in a display region and an opening in a non-display region, and the opening in the display region is formed on the first electrode.

Abstract: An organic electroluminescent panel has excellent reliability of luminance of emitted light, and an organic electroluminescent display device includes such an organic electroluminescent panel. The organic electroluminescent panel includes a structure in which the first electrode, an organic layer including at least a light-emitting layer, the second electrode are stacked in this order on a substrate having a surface on which an organic insulating film is formed, wherein the organic electroluminescent panel further includes an inorganic insulating film, the inorganic insulating film covers the organic insulating film and the first electrode, the inorganic insulating film has an opening in a display region and an opening in a non-display region, and the opening in the display region is formed on the first electrode.

Abstract: A reader of a current-perpendicular-to-plane magnetoresistive head includes a spin valve with sensor having a stabilizer adjacent thereto, to substantially avoid magnetization distribution at the edge of the sensor due to vortex effect. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer includes a pinned ferromagnetic layer adjacent to the free layer, and an antiferromagnetic layer positioned thereon. It becomes easy to provide an effective biasing using a variety of materials having different magnetic moments and thickness. Also problems related to sensor edge for small size will be overcome. A method of manufacturing the reader is also provided.

Abstract: A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated from a high perpendicular anisotropy layer by a spacer. Thus, the high anisotropy material introduces an out-of-plane component by exchange coupling. The high perpendicular anisotropy material also has low spin polarization. Further, the low anisotropy material positioned closer to the pinned layer has a high spin polarization. As a result, the magnetization of the low anisotropy material is re-oriented from an in-plane direction to an out-of-plane direction. Accordingly, the overall free layer perpendicular anisotropy can be made small as a result of the low anisotropy material and the high anisotropy material. Adjusting the thickness of these layers, as well as the spacer therebetween, can further lower the anisotropy and thus further increase the sensitivity.

Abstract: An in-stack bias is provided for stabilizing the free layer of a ballistic magneto resistive (BMR) sensor. In-stack bias includes a decoupling layer that is a spacer between the free layer and a ferromagnetic stabilizer layer of the in-stack bias, and an anti-ferromagnetic layer positioned above the ferromagnetic layer. The spacer is a nano-contact layer having magnetic particles positioned in a non-magnetic matrix. The free layer may be single layer, composed or synthetic, and the in-stack bias may be laterally bounded by the sidewalls, or alternatively, extend above the sidewalls and spacer. Additionally, a hard bias may also be provided. The spacer of the in-stack bias results in the reduction of the exchange coupling between the free layer and ferromagnetic stabilizing layer, an improved A?R due to confinement of current flow through a smaller area, and increased MR due to the domain wall created within the magnetic nano-contact.

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

Abstract: A compact oscillator in which the oscillation frequency can be adjusted to a desired value is provided. The oscillator includes: a magnetoresistive effect element comprising a pinned layer, a nonmagnetic spacer layer, and a free layer of which magnetization direction is changeable that are stacked in that order, a magnetization direction of the pinned layer being substantially fixed along a direction perpendicular to a stack direction; a bias magnetic field application unit for applying a bias magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the magnetization direction of the pinned layer; and an adjusting magnetic field application unit for applying an adjusting magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the direction of the bias magnetic field.

Abstract: An organic EL device includes an anode, a cathode having optical transparency, and an organic EL layer disposed between the anode and the cathode and including at least a fluorescent layer. The cathode has a metal layer including a first metal and a low work function metal, and a conductive oxide layer arranged in this order from the organic EL layer side, and the work function of the low work function metal is smaller than the work function of the first metal. The metal layer has a first surface on the organic EL layer side and a second surface on the conductive oxide layer side, and the concentration of the low work function metal at the first surface is greater than the concentration of the low work function metal at the second surface.

Abstract: A compact oscillator in which the oscillation frequency can be adjusted to a desired value is provided. The oscillator includes: a magnetoresistive effect element comprising a pinned layer, a nonmagnetic spacer layer, and a free layer of which magnetization direction is changeable that are stacked in that order, a magnetization direction of the pinned layer being substantially fixed along a direction perpendicular to a stack direction; a bias magnetic field application unit for applying a bias magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the magnetization direction of the pinned layer; and an adjusting magnetic field application unit for applying an adjusting magnetic field to the free layer in a direction that is perpendicular to the stack direction and is different from the direction of the bias magnetic field.

Abstract: A magnetic head is provided, which includes a magnetoresistive effect element having a pinned layer and a free layer and can sufficiently suppress noise induced by spin transfer even for high current density. The magnetic head includes the magnetoresistive effect element which comprises: a first pinned layer; a first spacer layer made of an insulating material; a free layer having a magnetization direction changeable in accordance with an external magnetic field; a second spacer layer that is conductive; and a second pinned layer, wherein those layers are stacked in that order. A magnetization direction of the first pinned layer is substantially fixed in a direction perpendicular to a stacked direction, and a magnetization direction of the second pinned layer is fixed to be opposite to the magnetization direction of the first pinned layer.

Abstract: A thin-film magnetic head is provided with an antiferromagnetic layer; a pinned layer comprising a first ferromagnetic layer, in contact with the antiferromagnetic layer, a second ferromagnetic layer having a direction of magnetization opposite from that of the first ferromagnetic layer, and a nonmagnetic spacer layer disposed between the first and second ferromagnetic layers; a free layer; and an intermediate layer disposed between the pinned layer and the free layer. The first ferromagnetic layer of the pinned layer is provided with a first layer comprising a ferromagnetic material, and a second layer, disposed between the first layer and the nonmagnetic spacer layer, comprising a ferromagnetic material. The first layer has a bulk scattering coefficient lower than that of the second layer.

Abstract: A reader of a current-perpendicular-to-plane magnetoresistive head includes a spin valve with sensor having a stabilizer adjacent thereto, to substantially avoid magnetization distribution at the edge of the sensor due to vortex effect and charge accumulation. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer includes a pinned ferromagnetic layer adjacent to the free layer, and an antiferromagnetic layer positioned thereon. It becomes easy to provide an effective biasing using a variety of materials having different magnetic moments and thickness. Also problems related to sensor edge for small size will be overcome. A method of manufacturing the reader is also provided.

Abstract: A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The pinned layer is highly resistive and includes a Co100-xFex layer used in at least a part of the pinned layer. Optionally, this material may also be used in at least a part of the free layer. The value of x may be various values between 10 and 75 percent, plus or minus about 10 percent. The pinned layer is a single layer, or a synthetic multi-layered structure having a spacer between sub-layers. To increase resistivity, oxygen is introduced during deposition of either or both of the pinned layer and free layer.

Abstract: An in-stack bias is provided for stabilizing the free layer of a magneto-resistive sensor. More specifically, a stabilizer layer provided above a free layer has a tilted magnetization. As a result of this tilt, the interlayer coupling between the free layer and the pinned layer is reduced, and the related art hysteresis and asymmetry problems are substantially overcome. Additionally, a method of tilting the stabilizer layer of the in-stack bias is also provided, including a method of annealing using annealing temperature differentials and magnetic field directions.

Abstract: A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated from a high perpendicular anisotropy layer by a spacer. Thus, the high anisotropy material introduces an out-of-plane component by exchange coupling. The high perpendicular anisotropy material also has low spin polarization. Further, the low anisotropy material positioned closer to the pinned layer has a high spin polarization. As a result, the magnetization of the low anisotropy material is re-oriented from an in-plane direction to an out-of-plane direction. Accordingly, the overall free layer perpendicular anisotropy can be made small as a result of the low anisotropy material and the high anisotropy material. Adjusting the thickness of these layers, as well as the spacer therebetween, can further lower the anisotropy and thus further increase the sensitivity.

Abstract: The thin-film magnetic head of the present invention is provided with an antiferromagnetic layer, a pinned layer whose direction of magnetization is fixed by exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization varies according to external magnetic field, an intermediate layer disposed between the pinned layer and free layer, and a pair of electrode layers for supplying a sense current in a layer thickness direction of the free layer. One electrode layer is connected to the pinned layer. Due to this configuration, a sense current flows through the free layer, the intermediate layer, and the pinned layer, but basically does not flow through the antiferromagnetic layer. As a consequence, the antiferromagnetic layer does not contribute to total resistance of the magnetoresistance element, allowing a high magnetoresistance ratio to be obtained.

Abstract: A reader of a magnetoresistive head includes a granular type free layer. The magnetoresistive head is for a current-perpendicular to plane type, and can be used in either a giant magnetoresistance (GMR) or ballistic magnetoresistance (BMR) scheme. The granular type free layer includes an insulating matrix, for example but not by way of limitation, Al2O3, and metal magnetic grains, for example but not by way of limitation, Ni, CoFe or NiFe. The metal grain size is about 10 to 30 nm, and the effect of having these grains interspersed in the insulative matrix is to provide a softer granular type free layer having a low magnetization. Accordingly, the granular type free layer of the present invention can be made thicker, on the order of about 5 to 10 nm, thus further improving overall thermal stability, reducing spin transfer effect and improving output read signal.

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.