Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: To provide a photoelectric conversion element capable of further suppressing color mixing, a method for manufacturing the same, and an imaging device.

Abstract: Power consumption in realizing a convolutional neural network (CNN) is reduced. A solid-state imaging element according to the present technology includes a photoelectric conversion element that photoelectrically converts received light into signal charge corresponding to the amount of received light, a floating diffusion that holds the signal charge obtained by the photoelectric conversion element, a transfer control element that controls transfer of the signal charge from the photoelectric conversion element to the floating diffusion, and a control unit that controls application of a drive voltage to the transfer control element on the basis of a convolution coefficient in a CNN.

Abstract: To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating section accumulates the charges generated by the photoelectric conversion section. The transfer gate transfers the charges generated by the photoelectric conversion section to the charge accumulating section. The transfer gate includes a plurality of vertical gate electrodes which is filled to a predetermined depth from an interface of the semiconductor substrate, and at least a part of a diameter is different in the depth direction of the semiconductor substrate.

Abstract: To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating section accumulates the charges generated by the photoelectric conversion section. The transfer gate transfers the charges generated by the photoelectric conversion section to the charge accumulating section. The transfer gate includes a plurality of vertical gate electrodes which is filled to a predetermined depth from an interface of the semiconductor substrate, and at least a part of a diameter is different in the depth direction of the semiconductor substrate.

Abstract: Power consumption in realizing a convolutional neural network (CNN) is reduced. A solid-state imaging element according to the present technology includes a photoelectric conversion element that photoelectrically converts received light into signal charge corresponding to the amount of received light, a floating diffusion that holds the signal charge obtained by the photoelectric conversion element, a transfer control element that controls transfer of the signal charge from the photoelectric conversion element to the floating diffusion, and a control unit that controls application of a drive voltage to the transfer control element on the basis of a convolution coefficient in a CNN.

Abstract: The present technology relates to an imaging element and an electronic device enabling suppression of generation of noise. Provided with a substrate, a first photoelectric conversion region provided on the substrate, a second photoelectric conversion region provided on the substrate and adjacent to the first photoelectric conversion region, a trench provided on the substrate and between the first photoelectric conversion region and the second photoelectric conversion region, a first impurity region including a first impurity provided on the substrate and on a sidewall of the trench, and a second impurity region including a second impurity provided on the substrate and between the first photoelectric conversion region or the second photoelectric conversion region and the first impurity region. The present technology can be applied to an imaging element.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: The present technology relates to an imaging element and an electronic device enabling suppression of generation of noise. Provided with a substrate, a first photoelectric conversion region provided on the substrate, a second photoelectric conversion region provided on the substrate and adjacent to the first photoelectric conversion region, a trench provided on the substrate and between the first photoelectric conversion region and the second photoelectric conversion region, a first impurity region including a first impurity provided on the substrate and on a sidewall of the trench, and a second impurity region including a second impurity provided on the substrate and between the first photoelectric conversion region or the second photoelectric conversion region and the first impurity region. The present technology can be applied to an imaging element.

Abstract: To enhance a charge transfer efficiency in a transfer gate having a vertical gate electrode. A solid-state imaging element includes a photoelectric conversion section, a charge accumulating section, and a transfer gate. The photoelectric conversion section is formed in a depth direction of a semiconductor substrate, and generates charges corresponding to a quantity of received light. The charge accumulating section accumulates the charges generated by the photoelectric conversion section. The transfer gate transfers the charges generated by the photoelectric conversion section to the charge accumulating section. The transfer gate includes a plurality of vertical gate electrodes which is filled to a predetermined depth from an interface of the semiconductor substrate, and at least a part of a diameter is different in the depth direction of the semiconductor substrate.