Abstract: An analog differential amplifier circuit, such as an operational transconductance amplifier (OTA), with input offset correction capability. First and second analog floating gate (AFG) devices each include a trim transistor connected in parallel with a series transistor in first and second input legs, respectively, of the amplifier. Floating gate electrodes in the AFG devices are differentially programmed to correct for error in the output signal in response to zero input differential voltage at its inputs. Temperature stability is attained by programming the floating gate electrodes to gate voltages above the floating gate transistors. In one embodiment, the AFG devices each include a second trim transistor sharing the same floating gate electrode; the sum of the currents conducted by the second trim transistors is added, by way of a current mirror, to the tail current applied to the first and second input legs.

Abstract: An analog differential amplifier circuit, such as an operational transconductance amplifier (OTA), with input offset correction capability. First and second analog floating gate (AFG) devices each include a trim transistor connected in parallel with a series transistor in first and second input legs, respectively, of the amplifier. Floating gate electrodes in the AFG devices are differentially programmed to correct for error in the output signal in response to zero input differential voltage at its inputs. Temperature stability is attained by programming the floating gate electrodes to gate voltages above the floating gate transistors. In one embodiment, the AFG devices each include a second trim transistor sharing the same floating gate electrode; the sum of the currents conducted by the second trim transistors is added, by way of a current mirror, to the tail current applied to the first and second input legs.

Abstract: Memory architecture, such as for a flash EEPROM memory embedded within a processor or other large scale integrated circuit, and including differential sense circuitry. The memory includes an array of memory cells in rows and columns, and organized into sectors, each sector split into portions. Columns of the array are grouped into small groups from which a final stage column decode selects a column from the group based on the least significant bits of the column address. Adjacent groups of columns are paired, with a selected column from each group coupled to a differential input of the sense amplifier, but with one of the selected columns associated with an unselected sector portion and thus serving as a dummy bit line. Conductor routing is simplified, and chip area is reduced, by maintaining unselected column groups adjacent or nearby to selected column groups.

Abstract: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIG. 7) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (714), an access transistor (716), and a sense transistor (720). A current path of each access transistor is connected in series with a current path of each respective sense transistor. A first program data lead (706) is connected to the switch of each memory cell in a first column. A bit line (718) is connected to the current path of each access transistor in the first column. A read select lead (721) is connected to a control terminal of each access transistor in the first row. A first row select lead (700) is connected to a control terminal of the switch in each memory cell in a first row.

Abstract: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIGS. 7 and 8) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (806) coupled to receive a first program voltage (PGMDATA) and a first select signal (ROWSEL). A voltage divider (804) is coupled in series with the switch. A sense transistor (152) has a sense control terminal (156) and a current path coupled between an output terminal (108) and a reference terminal (110). A first capacitor (154) has a first terminal coupled to the switch and a second terminal coupled to the sense control terminal. An access transistor (716) has a control terminal coupled to receive a read signal (721), and a current path coupled between the output terminal and a bit line (718).

Abstract: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIGS. 7 and 8) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (806) coupled to receive a first program voltage (PGMDATA) and a first select signal (ROWSEL). A voltage divider (804) is coupled in series with the switch. A sense transistor (152) has a sense control terminal (156) and a current path coupled between an output terminal (108) and a reference terminal (110). A first capacitor (154) has a first terminal coupled to the switch and a second terminal coupled to the sense control terminal. An access transistor (716) has a control terminal coupled to receive a read signal (721), and a current path coupled between the output terminal and a bit line (718).

Abstract: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory array (FIG. 7) is disclosed. The memory array includes a plurality of memory cells arranged in rows and columns. Each memory cell has a switch (714), an access transistor (716), and a sense transistor (720). A current path of each access transistor is connected in series with a current path of each respective sense transistor. A first program data lead (706) is connected to the switch of each memory cell in a first column. A bit line (718) is connected to the current path of each access transistor in the first column. A read select lead (721) is connected to a control terminal of each access transistor in the first row. A first row select lead (700) is connected to a control terminal of the switch in each memory cell in a first row.

Abstract: Memory architecture, such as for a flash EEPROM memory embedded within a processor or other large scale integrated circuit, and including differential sense circuitry. The memory includes an array of memory cells in rows and columns, and organized into sectors, each sector split into portions. Columns of the array are grouped into small groups from which a final stage column decode selects a column from the group based on the least significant bits of the column address. Adjacent groups of columns are paired, with a selected column from each group coupled to a differential input of the sense amplifier, but with one of the selected columns associated with an unselected sector portion and thus serving as a dummy bit line. Conductor routing is simplified, and chip area is reduced, by maintaining unselected column groups adjacent or nearby to selected column groups.

Abstract: An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell (FIGS. 1-2) is disclosed. The memory cell includes a sense transistor (152) having a source (110), a drain (108), and a control gate layer (156). The memory cell includes a first lightly doped region (160) having a first conductivity type and a second lightly doped region (162) having the first conductivity type. A first dielectric region is formed between the control gate layer and the first lightly doped region. A second dielectric region is formed between the control gate layer and the second lightly doped region.

Abstract: A method for detecting defects between parallel rows of conductors (ROW) in an integrated-circuit array (ARR) includes (a) connecting all alternate rows (ROW) of conductors of the array (ARR) to a first voltage (V.sub.DD) and connecting the other alternate rows (ROW) of conductors of the array (ARR) to a second voltage (V.sub.REF) different from the first voltage, while measuring the current drawn; (b) if the current does not exceed a first limit, ending the process; (c) if the current exceeds the first limit, separately repeating step (a) on first and second halves of the array rather than all of the array, with all of the rows (ROW) of conductors of the half of the array (ARR) not under test connected to the second voltage (V.sub.REF); (d) if the current exceeds a second limit for a half of the array (ARR) in step (c), repeating step (a) on each quarter of the array (ARR) in that half with all of the rows (ROW) of the array (ARR) not under test connected to the second voltage V.sub.

Abstract: Reference circuitry RC includes a current-sensing translator M5-M7, MX connected to a current reference source RS. The outputs O1, O2, etc. of the current-sensing translator M5-M7, MX are mirrored into one or more sense amplifiers SA1,SA2 of sensing circuitry SC. The current-sensing translator M5-M7, MX permits the current from the current reference source RS to be mirrored to multiple sense amplifiers SA1,SA2 at a predetermined ratio.

Abstract: Sense amplifier circuitry (SC) includes a differential amplifier (A) having a reference input and a memory input. The output of a first sense amplifier (SA1) is coupled to the reference input of the differential amplifier (A) and to the input of a second sense amplifier (SA2). The output of the second sense amplifier (SA2) is coupled to the memory input of the differential amplifier (A) and to the input of the first sense amplifier (SA1). The first sense amplifier (SAR) and the second sense amplifier (SA2) include identical mirror transistor circuits (M1, M2, M3, M4).

Abstract: A wordline-decode system of a nonvolatile memory array is split into three smaller decoding subsystems (a Read-Mode Decode Subsystem, a Program/Erase-Mode Decode Subsystem and a Segment-Select Decoder Subsystem). The segmented array has small bitline capacitance and requires few input connections to each decoding subsystem. The Read-Mode Decoder circuitry and the Program/Erase-Mode Decoder circuitry are separated, allowing the Read-Mode Decoder circuitry to be desired for high speed access and allowing the Program/Erase-Mode Decoder circuitry to be desired for high voltage operation. Buried-bitline segment-select transistors reduce the area required for those transistors. Erasing may be performed after first checking each row of a segment to determine the present of any over-erased cells. Programming may be performed by allowing the common source-column lines of the selected segment to float and by placing preselected voltages on the appropriate wordline and drain-column line.

Abstract: A decoder and driver circuit for producing an output voltage exceeding the power supply uses a CMOS decode circuit followed by NMOS output stage and pump circuit. The pump clock is derived from a controlled oscillator, and the oscillator is synchronized with the access cycle of the memory device in which the circuit is used, so retention of the high level output is assured for an indefinitely long cycle time.