Abstract: Methods, apparatus and systems are described as relating to electrostatic sensors for detection in micro or nano electromechanical systems. In exemplary embodiments, a sensor for detecting a threshold value of is provided. The sensor includes a deformable member with a mass detection area, an electrostatic actuator having first and second plates, the first plate being connected to the mass detection area, and a voltage source connected to each of the first and second plate. The operating voltage being proximate to a local bifurcation point of the electrostatic sensor for the first and second plates to pull-in together. Upon an external mass having the threshold value appearing on the mass detection area, the local bifurcation point of the electrostatic sensor is shifted such that the first and second plates will pull in to contact each other by movement of the deformable member to signal detection.

Abstract: A method for forming a field effect transistor (FET) device includes forming a gate conductor and gate dielectric on an active device area of a semiconductor wafer, the semiconductor wafer including a buried insulator layer formed over a bulk substrate and a semiconductor-on-insulator layer initially formed over the buried insulator layer. Source and drain extensions are formed in the semiconductor-on-insulator layer, adjacent opposing sides of the gate conductor, and source and drain sidewall spacers are formed adjacent the gate conductor. Remaining portions of the semiconductor-on-insulator layer adjacent the sidewall spacers and are removed so as to expose portions of the buried insulator layer. The exposed portions of the buried insulator layer are removed so as to expose portions of the bulk substrate. A semiconductor layer is epitaxially grown on the exposed portions of the bulk substrate and the source and drain extensions, and source and drain implants are formed in the epitaxially grown layer.

Abstract: A MOSFET structure and method of forming is described. The method includes forming a metal-containing layer that is thick enough to fully convert the semiconductor gate stack to a semiconductor metal alloy in a first MOSFET type region but only thick enough to partially convert the semiconductor gate stack to a semiconductor metal alloy in a second MOSFET type region. In one embodiment, the gate stack in a first MOSFET region is recessed prior to forming the metal-containing layer so that the height of the first MOSFET semiconductor stack is less than the height of the second MOSFET semiconductor stack. In another embodiment, the metal-containing layer is thinned over one MOSFET region relative to the other MOSFET region prior to the conversion process.

Abstract: A control system for reducing cargo pendulation. The control system calculates a correction factor and adds the correction factor for the operator input motions in addition to the motion of the platform in order to provide a reference position of the suspension point of the hoisting cable. The reference position is then provided to a tracking controller so that the crane can be forced to track the needed motions for reducing the cargo pendulation.

Abstract: A control system for reducing cargo pendulation. The control system calculates a correction factor and adds the correction factor for the operator input motions in addition to the motion of the platform in order to provide a reference position of the suspension point of the hoisting cable. The reference position is then provided to a tracking controller so that the crane can be forced to track the needed motions for reducing the cargo pendulation.

Abstract: A control system for reducing cargo pendulation. The control system calculates a correction factor and adds the correction factor for the operator input motions in addition to the motion of the platform in order to provide a reference position of the suspension point of the hoisting cable. The reference position is then provided to a tracking controller so that the crane can be forced to track the needed motions for reducing the cargo pendulation.