Patents by Inventor HaSeok Jang

HaSeok Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11443926
    Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: September 13, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: WonKi Jeong, JuIll Lee, HaSeok Jang
  • Patent number: 11430640
    Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: August 30, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: WonKi Jeong, JuIll Lee, HaSeok Jang
  • Publication number: 20210035786
    Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.
    Type: Application
    Filed: July 24, 2020
    Publication date: February 4, 2021
    Inventors: WonKi Jeong, JuIll Lee, HaSeok Jang
  • Publication number: 20210035785
    Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.
    Type: Application
    Filed: July 22, 2020
    Publication date: February 4, 2021
    Inventors: WonKi Jeong, JuIll Lee, HaSeok Jang