Patents by Inventor Hassan Kaakani

Hassan Kaakani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MRAM read sequence using canted bit magnetization
    Patent number: 7248496
    Abstract: A new read scheme is provided for an MRAM bit having a pinned layer (fixed) and a storage layer (free) sandwiching a nonmagnetic spacer layer. By applying a magnetic field to the bit at least partially orthogonal to the easy axis of the bit, the magnetization direction of the storage layer can be partially rotated or canted without switching the logical state of the MRAM bit. The resistivity of the bit is measured (calculated based on a voltage/current relationship) in two ways: (i) with the magnetization direction of the storage layer partially rotated in a first direction and (ii) with the magnetization direction of the storage layer in its bi-stable orientation parallel to the easy axis. Those measures can then be used to compare and determine the logical state of the storage layer.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: July 24, 2007
    Assignee: Honeywell International Inc.
    Inventors: Romney R. Katti, Owen J. Hynes, Daniel S. Reed, Hassan Kaakani
  • MRAM read sequence using canted bit magnetization
    Publication number: 20070109839
    Abstract: A new read scheme is provided for an MRAM bit having a pinned layer (fixed) and a storage layer (free) sandwiching a nonmagnetic spacer layer. By applying a magnetic field to the bit at least partially orthogonal to the easy axis of the bit, the magnetization direction of the storage layer can be partially rotated or canted without switching the logical state of the MRAM bit. The resistivity of the bit is measured (calculated based on a voltage/current relationship) in two ways: (i) with the magnetization direction of the storage layer partially rotated in a first direction and (ii) with the magnetization direction of the storage layer in its bi-stable orientation parallel to the easy axis. Those measures can then be used to compare and determine the logical state of the storage layer.
    Type: Application
    Filed: November 14, 2005
    Publication date: May 17, 2007
    Applicant: Honeywell International Inc.
    Inventors: Romney Katti, Owen Hynes, Daniel Reed, Hassan Kaakani