Abstract: Embodiments relate to a die package featuring a sputtered metal shield to reduce Electro-Magnetic Interference (EMI). According to a particular embodiment, a die featuring a top surface exposed by surrounding Molded Underfill (MUF) material, is subjected to metal sputtering. The resulting sputtered metal shield is in direct physical and thermal contact with the die, and is in electrical contact with a substrate supporting the die (e.g., to provide shield grounding). Specific embodiments may be particularly suited to reducing the EMI of a package containing an electro-optic die, to between 3-15 dB. The conformal nature and small thickness of the sputtered metal shield desirably conserves space and reduces package footprint. Direct physical contact between the shield and the die surface exposed by the MUF, enhances thermal communication (e.g., reducing junction temperature). According to certain embodiments, the sputtered metal shield comprises a stainless steel liner, copper, and a stainless steel coating.

Abstract: A secondary measurement of rapid thermal annealer temperature is provided. The secondary measurement allows a primary temperature measuring device to be monitored for proper operation in real time. A rapid thermal annealer system is provided having a heating chamber configured to receive and anneal a silicon wafer. Several halogen light sources are provided for heating the silicon wafer. An optical pyrometer measures temperature of the silicon wafer as it is heated by the halogen lamps. A thin silicon ring is provided with an s-type thermalcouple attached thereto. The silicon ring is positioned so that its inner edge is aligned closely with an outer edge of the silicon wafer. An s-type amplifier is connected to the s-type thermalcouple wherein the combination generates a signal indicative of the ring temperature. The ring temperature is compared against the wafer temperature as a measured by the pyrometer.