Abstract: An integrated circuit module, system and method of providing power and signals is disclosed that includes a silicon chip and a package substrate having voltage connections and signal connections. The silicon chip includes a silicon substrate having a top surface, a bottom surface and circuitry formed therein, one or more front-side metal layers formed on the top surface of the silicon substrate, one or more back-side metal layers formed on the bottom surface of the silicon substrate, and one or more through silicon vias (TSVs) formed through the silicon substrate for creating a conductive pathway from the back-side of the silicon substrate to the front-side of the silicon substrate, preferably closest to the silicon substrate.

Abstract: An integrated circuit module, system and method of providing power and signals is disclosed that includes a silicon chip and a package substrate having voltage connections and signal connections. The silicon chip includes a silicon substrate having a top surface, a bottom surface and circuitry formed therein, one or more front-side metal layers formed on the top surface of the silicon substrate, one or more back-side metal layers formed on the bottom surface of the silicon substrate, and one or more through silicon vias (TSVs) formed through the silicon substrate for creating a conductive pathway from the back-side of the silicon substrate to the front-side of the silicon substrate, preferably closest to the silicon substrate.

Abstract: An integrated circuit package with a buffer providing radiation protection to memory elements and components is described. The integrated circuit packages and the incorporated buffers provide a protective distance between potential sources of internal radiation particles within the integrated circuit package and any memory elements/components which may be sensitive to radiation such as alpha particles. This protective distance allows for the integrated circuit packages to be completed or assembled without needing added more expensive or redundant memory components.

Abstract: An integrated circuit package with a buffer providing radiation protection to memory elements and components is described. The integrated circuit packages and the incorporated buffers provide a protective distance between potential sources of internal radiation particles within the integrated circuit package and any memory elements/components which may be sensitive to radiation such as alpha particles. This protective distance allows for the integrated circuit packages to be completed or assembled without needing added more expensive or redundant memory components.

Abstract: An approach to creating a semiconductor chip including a semiconductor substrate with one or more topside metal layers and one or more backside metal layers. The approach creates the semiconductor chip with one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate and one or more inductors in the one or more backside metal layer. Furthermore, the approach creates the semiconductor chip with one or more through silicon vias extending through the semiconductor substrate connecting the one or more inductors in the one or more backside metal layers and the one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate.

Abstract: An approach to creating a semiconductor chip including a semiconductor substrate with one or more topside metal layers and one or more backside metal layers. The approach creates the semiconductor chip with one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate and one or more inductors in the one or more backside metal layer. Furthermore, the approach creates the semiconductor chip with one or more through silicon vias extending through the semiconductor substrate connecting the one or more inductors in the one or more backside metal layers and the one or more semiconductor devices with wiring interconnects in the one or more topside metal layers on the semiconductor substrate.

Abstract: Structure and method for a backside capacitor using through-substrate vias (TSVs) and backside metal plates. The structure includes: a substrate, a device layer over the substrate, a first plurality of metal layers connected to the device layer, where the device layer and the first plurality of metal layers are disposed on a first side of the substrate, and a second plurality of metal layers disposed on a second side of the substrate opposite the first side, where the second plurality of metal layers form at least one capacitor and where a plurality of through-substrate vias (TSVs) extend between the first plurality of metal layers and the second plurality of metal layers.

Abstract: Structure and method for a backside capacitor using through-substrate vias (TSVs) and backside metal plates. The structure includes: a substrate, a device layer over the substrate, a first plurality of metal layers connected to the device layer, where the device layer and the first plurality of metal layers are disposed on a first side of the substrate, and a second plurality of metal layers disposed on a second side of the substrate opposite the first side, where the second plurality of metal layers form at least one capacitor and where a plurality of through-substrate vias (TSVs) extend between the first plurality of metal layers and the second plurality of metal layers.

Abstract: An integrated circuit module, system and method of providing power and signals is disclosed that includes a silicon chip and a package substrate having voltage connections and signal connections. The silicon chip includes a silicon substrate having a top surface, a bottom surface and circuitry formed therein, one or more front-side metal layers formed on the top surface of the silicon substrate, one or more back-side metal layers formed on the bottom surface of the silicon substrate, and one or more through silicon vias (TSVs) formed through the silicon substrate for creating a conductive pathway from the back-side of the silicon substrate to the front-side of the silicon substrate, preferably closest to the silicon substrate.

Abstract: In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, a voting structure with inputs from the second settable memory element, the third settable memory element and control to the settable memory elements determine the logical value held on the first settable memory element. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is the only propagation delay of the triple redundant latch.

Abstract: In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, three voting structures with inputs from the first, second, and third settable memory elements, determine the logical value held on each of the settable memory elements. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is the only propagation delay of the triple redundant latch.

Abstract: In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, three voting structures with inputs from the first, second, and third settable memory elements, determine the logical value held on each of the settable memory elements. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is the only propagation delay of the triple redundant latch.

Abstract: In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, a voting structure with inputs from the second settable memory element, the third settable memory element and control to the settable memory elements determine the logical value held on the first settable memory element. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is the only propagation delay of the triple redundant latch.