Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: An embodiment discloses a light source unit including a first terminal, a first semiconductor layer supporting the first terminal, a second semiconductor layer surrounding the first terminal, and a second terminal electrically connected to the second semiconductor layer and not surrounding the first terminal.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A high-power LED lamp uses an LED chip that can be larger than 1 mm square. The chip has trenches that can convert light trapped in the semiconductor into light that passes through a major surface of the chip. The trenches include light-reflecting tracks joined to a chip terminal and feeding a semiconductor layer. The chip can have triangular light emitting elements that improve light extraction from the semiconductor. The elements can be fused, resulting in improved manufacture yield of chips. A 25 watt single chip lamp with a heat sink very close to the active region is described.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: A mobile phone comprises an car-piece for transmitting sound in a first direction a transducer for converting electrical signals into speech sound, and a dielectric member having an acoustic duct that extends in a direction that is normal to the first direction, the acoustic duct guiding sound generated by the transducer to the ear-piece. By this arrangement all radiating parts of the mobile can be kept away from the ear. The earpiece is movable relative to the casing of the mobile phone.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: An electromagnetic display matrix includes easily replaceable modules mounted on a panel that is fitted with electromagnets, each module carrying an array of rotatable reflective vanes and a display sheet having an array of back-lit diffusers. The display sheet is removable by sliding it on the surface of the module, and the module is removable by sliding it on the surface of the panel. Tabs are provided by which the module can be released from the panel.

Abstract: A display system using a matrix of rotatable display elements is provided in which the optical states of the display elements can be read back to confirm that the matrix is portraying information correctly. The display system is arranged to automatically ameliorate the effect of detected non-operating display elements on the intelligibility of the message displayed.

Abstract: A rotatable display element has a reflective indicating vane comprising a thin sheet which is mounted so as to be in a substantially planar state. Such a thin and light sheet typically has little or no structural rigidity and preferably, according to this invention, the means for mounting the sheet are arranged to provide a tensioning force in the sheet. This causes the sheet to be held in a substantially planar state. The sheet according to this invention is also preferably arranged to be easily removed and replaced when it becomes faded or soiled.

Abstract: A display having a matrix of back-illuminated electromagnetically operated pixels. The display may be switched, by means of a movable light-passing sheet, between first and second modes of operation. In the first mode, the display is monochromatic and has a high resolution. In the second mode, color images are displayed but at a lower resolution.

Abstract: A display device of the matrix type utilizes coincident current selection of display elements by the provision of row conductors (R) activating row electromagnets (D) and column conductors (C) activating column electromagnets (H). Each display element includes a rotatable vane (S) which is stable in open and closed positions and a permanent magnet (M) co-operates with the electromagnet (D) to urge the vane (S) into the appropriate position.A clutch member in the form of a bar (L) extending from the vane (S) contacts the pole face of an electromagnetic (H) which, when activated, serves to inhibit movement of the vane irrespective of activation of the row electromagnet (D). Thus by pulsing the display row-by-row, the state of the display elements can be set by selective inhibiting of movement in coincident manner of the appropriate vanes (S) by pulsing the respective column conductors.