Patents by Inventor Hassan Shahjamali

Hassan Shahjamali has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming insulative material against conductive structures
    Patent number: 6734071
    Abstract: The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
    Type: Grant
    Filed: August 30, 2000
    Date of Patent: May 11, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Jeffrey W. Honeycutt, Hassan Shahjamali, Daniel Smith
  • Transistor structures
    Patent number: 6709937
    Abstract: The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: March 23, 2004
    Assignee: Micron Technology, Inc.
    Inventors: Jeffrey W. Honeycutt, Hassan Shahjamali, Dani I Smith
  • Transistor Structures
    Publication number: 20030129803
    Abstract: The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 10, 2003
    Inventors: Jeffrey W. Honeycutt, Hassan Shahjamali, Daniel Smith
  • Transistor structures
    Patent number: 6501140
    Abstract: The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
    Type: Grant
    Filed: November 28, 2001
    Date of Patent: December 31, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Jeffrey W. Honeycutt, Hassan Shahjamali, Daniel Smith
  • Transistor structures, methods of forming transistor structures, and methods of forming insulative material against conductive structures
    Publication number: 20020033512
    Abstract: The invention encompasses a method of forming an insulative material along a conductive structure. A conductive structure is provided over a substrate, and an electrically insulative material is formed along at least a portion of the conductive structure. The electrically insulative material comprises at least one of SixOyNz and AlpOq, wherein p, q, x, y and z are greater than 0 and less than 10. A dopant barrier layer is formed over the electrically insulative material. BPSG is formed over the dopant barrier layer, and the dopant barrier layer prevents dopant migration from the BPSG to the electrically insulative material. The invention also encompasses transistor structures, and methods of forming transistor structures.
    Type: Application
    Filed: November 28, 2001
    Publication date: March 21, 2002
    Inventors: Jeffrey W. Honeycutt, Hassan Shahjamali, Daniel Smith