Patents by Inventor Haujie Chen

Haujie Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and Method for Reducing Threshold Voltage Variation
    Publication number: 20090294923
    Abstract: A structure comprises at least one transistor on a substrate, an insulator layer over the transistor, and an ion stopping layer over the insulator layer. The ion stopping layer comprises a portion of the insulator layer that is damaged and has either argon ion damage or nitrogen ion damage.
    Type: Application
    Filed: May 29, 2008
    Publication date: December 3, 2009
    Applicant: International Business Machines Corporation
    Inventors: Huilong Zhu, Yanfeng Wang, Daewon Yang, Haujie Chen