Abstract: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

Abstract: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

Abstract: The device (100) comprises a substrate (10) of a semiconductor material with a first and an opposite second surface (1,2) and a microelectromechanical (MEMS) element (50) which is provided with a fixed and a movable electrode (52, 51) that is present in a cavity (30). One of the electrodes (51,52) is defined in the substrate (10). The movable electrode (51) is movable towards and from the fixed electrode (52) between a first gapped position and a second position. The cavity (30) is opened through holes (18) in the substrate (10) that are exposed on the second surface (2) of the substrate (10). The cavity (30) has a height that is defined by at least one post (15) in the substrate (10), which laterally substantially surrounds the cavity (15).

Abstract: To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate (20) arranged on said isolating layer (10); at least one component (30) integrated in the silicon substrate (20), which component has at least one slightly doped zone (34); as well as at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) in such a manner that trouble-free operation also of slightly doped components (30), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region (42) is arranged on the side of the silicon substrate (20) facing away fr

Abstract: To refine a semiconductor device (100), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer (10) made of a dielectric material; at least one silicon substrate (20) arranged on said isolating layer (10); at least one component (30) integrated in the silicon substrate (20), which component has at least one slightly doped zone (34); as well as at least a first, in particular planar, metallization region (40) arranged between the isolating layer (10) and the component (30), in particular between the isolating layer (10) and the slightly doped zone (34) of the component (30), as well as a method of manufacturing at least one semiconductor device (100) in such a manner that trouble-free operation also of slightly doped components (30), such as pnp transistors, is guaranteed in a SOI process transferred onto the insulator, it is proposed that at least a second, in particular planar, metallization region (42) is arranged on the side of the silicon substrate (20) facing away f

Abstract: A flexible monolithic integrated circuit which is essentially formed from flexible circuit elements, connecting elements between the flexible circuit elements, and a flexible coating which comprises at least one layer of a coating material comprising a polymer, is suitable as a small and convenient integrated circuit for electronic devices on flexible data carriers for the logistic tracking of objects and persons. The invention also relates to a method of manufacturing a flexible integrated monolithic circuit whereby integrated monolithic circuit elements and connecting elements are formed in and on a semiconductor substrate, the main surface of the integrated circuit elements facing away from the semiconductor substrate are coated with a polymer resin, and the semiconductor substrate is removed. The method is based on conventional process steps in semiconductor technology and leads to a flexible integrated monolithic circuit in a small number of process steps.

Abstract: A flexible monolithic integrated circuit which is essentially formed from flexible circuit elements, connecting elements between the flexible circuit elements, and a flexible coating which comprises at least one layer of a coating material comprising a polymer, is suitable as a small and convenient integrated circuit for electronic devices on flexible data carriers for the logistic tracking of objects and persons.